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New scanning photoluminescence technique for quantitative mapping of the lifetime and of the doping density in processed silicon wafers

Krawczyk, S. K. and Bejar, and Kostka, and Nuban, and Warta, and Joly, and Blanchet, (1997):
New scanning photoluminescence technique for quantitative mapping of the lifetime and of the doping density in processed silicon wafers.
In: International Conference on Defect Recognition and Image Processing in Semiconductors <7, 1997, Templin, Germany>: Proceedings, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 1997
Creators: Krawczyk, S. K. and Bejar, and Kostka, and Nuban, and Warta, and Joly, and Blanchet,
Title: New scanning photoluminescence technique for quantitative mapping of the lifetime and of the doping density in processed silicon wafers
Language: English
Series Name: International Conference on Defect Recognition and Image Processing in Semiconductors <7, 1997, Templin, Germany>: Proceedings
Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 19 Nov 2008 16:04
License: [undefiniert]
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