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New scanning photoluminescence technique for quantitative mapping of the lifetime and of the doping density in processed silicon wafers

Krawczyk, S. K. ; Bejar, ; Kostka, ; Nuban, ; Warta, ; Joly, ; Blanchet, (1997):
New scanning photoluminescence technique for quantitative mapping of the lifetime and of the doping density in processed silicon wafers.
In: International Conference on Defect Recognition and Image Processing in Semiconductors <7, 1997, Templin, Germany>: Proceedings, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 1997
Creators: Krawczyk, S. K. ; Bejar, ; Kostka, ; Nuban, ; Warta, ; Joly, ; Blanchet,
Title: New scanning photoluminescence technique for quantitative mapping of the lifetime and of the doping density in processed silicon wafers
Language: English
Series: International Conference on Defect Recognition and Image Processing in Semiconductors <7, 1997, Templin, Germany>: Proceedings
Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 19 Nov 2008 16:04
License: [undefiniert]
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