Dusciac, Dorin ; Brizé, Virginie ; Chazalviel, Jean-Noël ; Lai, Yun-Feng ; Roussel, Hervé ; Blonkowski, Serge ; Schafranek, Robert ; Klein, Andreas ; Henry de Villeneuve, Catherine ; Allongue, Philippe ; Ozanam, François ; Dubourdieu, Catherine (2012)
Organic Grafting on Si for Interfacial SiO2 Growth Inhibition During Chemical Vapor Deposition of HfO2.
In: Chemistry of Materials, 24 (16)
doi: 10.1021/cm301247v
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Engineering of the silicon/high-permittivity (high-κ) dielectric interface by grafting an ultrathin organic layer on the silicon surface before HfO2 deposition is explored. Si(111) and Si(100) surfaces are functionalized using methyl groups as well as long alkoxy and functionalized alkyl chains. Amorphous HfO2 films are deposited by metal organic chemical vapor deposition. We show that methyl or carboxydecyl groups efficiently inhibit the formation of SiO2, while the quality of the HfO2 layer (uniformity, permittivity) is not affected by the grafting. The flatband voltage in metal–oxide–semiconductor structures with films grown on methyl-grafted p-type Si(100) is shifted by an additional 100 to 300 mV compared to that with films grown on a chemical SiO2 oxide. This is in good agreement with the expected dipole effect related to the grafting of such molecules on silicon. The interfacial state density is comparable to the one measured on films grown on SiO2/Si. This study opens up the route for the engineering of the Si/high-κ oxide interface using organic grafting.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Dusciac, Dorin ; Brizé, Virginie ; Chazalviel, Jean-Noël ; Lai, Yun-Feng ; Roussel, Hervé ; Blonkowski, Serge ; Schafranek, Robert ; Klein, Andreas ; Henry de Villeneuve, Catherine ; Allongue, Philippe ; Ozanam, François ; Dubourdieu, Catherine |
| Art des Eintrags: | Bibliographie |
| Titel: | Organic Grafting on Si for Interfacial SiO2 Growth Inhibition During Chemical Vapor Deposition of HfO2 |
| Sprache: | Englisch |
| Publikationsjahr: | 28 August 2012 |
| Verlag: | ACS Publications |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Chemistry of Materials |
| Jahrgang/Volume einer Zeitschrift: | 24 |
| (Heft-)Nummer: | 16 |
| DOI: | 10.1021/cm301247v |
| Kurzbeschreibung (Abstract): | Engineering of the silicon/high-permittivity (high-κ) dielectric interface by grafting an ultrathin organic layer on the silicon surface before HfO2 deposition is explored. Si(111) and Si(100) surfaces are functionalized using methyl groups as well as long alkoxy and functionalized alkyl chains. Amorphous HfO2 films are deposited by metal organic chemical vapor deposition. We show that methyl or carboxydecyl groups efficiently inhibit the formation of SiO2, while the quality of the HfO2 layer (uniformity, permittivity) is not affected by the grafting. The flatband voltage in metal–oxide–semiconductor structures with films grown on methyl-grafted p-type Si(100) is shifted by an additional 100 to 300 mV compared to that with films grown on a chemical SiO2 oxide. This is in good agreement with the expected dipole effect related to the grafting of such molecules on silicon. The interfacial state density is comparable to the one measured on films grown on SiO2/Si. This study opens up the route for the engineering of the Si/high-κ oxide interface using organic grafting. |
| Freie Schlagworte: | high-κ dielectric, oxide, interface, organic, grafting, methyl |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 28 Nov 2013 12:22 |
| Letzte Änderung: | 26 Mär 2015 20:10 |
| PPN: | |
| Sponsoren: | Nevine Rochat from CEA-LETI is acknowledged for the access to the ATR. , Cle ment Gaumer from STMicroelectronics is acknowledged for his help with the ATR measurements., This study was carried out in the framework of the MEDEA + FOREMOST project with the continuous support of STMicroelectronics and of SAFC Hitech, The PhD thesis of Dorin Dusciac was supported by CNRS and STMicroelectronics. |
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