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Organic Grafting on Si for Interfacial SiO2 Growth Inhibition During Chemical Vapor Deposition of HfO2

Dusciac, Dorin ; Brizé, Virginie ; Chazalviel, Jean-Noël ; Lai, Yun-Feng ; Roussel, Hervé ; Blonkowski, Serge ; Schafranek, Robert ; Klein, Andreas ; Henry de Villeneuve, Catherine ; Allongue, Philippe ; Ozanam, François ; Dubourdieu, Catherine (2012):
Organic Grafting on Si for Interfacial SiO2 Growth Inhibition During Chemical Vapor Deposition of HfO2.
In: Chemistry of Materials, 24 (16), pp. 3135-3142. ACS Publications, ISSN 0897-4756,
[Article]

Abstract

Engineering of the silicon/high-permittivity (high-κ) dielectric interface by grafting an ultrathin organic layer on the silicon surface before HfO2 deposition is explored. Si(111) and Si(100) surfaces are functionalized using methyl groups as well as long alkoxy and functionalized alkyl chains. Amorphous HfO2 films are deposited by metal organic chemical vapor deposition. We show that methyl or carboxydecyl groups efficiently inhibit the formation of SiO2, while the quality of the HfO2 layer (uniformity, permittivity) is not affected by the grafting. The flatband voltage in metal–oxide–semiconductor structures with films grown on methyl-grafted p-type Si(100) is shifted by an additional 100 to 300 mV compared to that with films grown on a chemical SiO2 oxide. This is in good agreement with the expected dipole effect related to the grafting of such molecules on silicon. The interfacial state density is comparable to the one measured on films grown on SiO2/Si. This study opens up the route for the engineering of the Si/high-κ oxide interface using organic grafting.

Item Type: Article
Erschienen: 2012
Creators: Dusciac, Dorin ; Brizé, Virginie ; Chazalviel, Jean-Noël ; Lai, Yun-Feng ; Roussel, Hervé ; Blonkowski, Serge ; Schafranek, Robert ; Klein, Andreas ; Henry de Villeneuve, Catherine ; Allongue, Philippe ; Ozanam, François ; Dubourdieu, Catherine
Title: Organic Grafting on Si for Interfacial SiO2 Growth Inhibition During Chemical Vapor Deposition of HfO2
Language: English
Abstract:

Engineering of the silicon/high-permittivity (high-κ) dielectric interface by grafting an ultrathin organic layer on the silicon surface before HfO2 deposition is explored. Si(111) and Si(100) surfaces are functionalized using methyl groups as well as long alkoxy and functionalized alkyl chains. Amorphous HfO2 films are deposited by metal organic chemical vapor deposition. We show that methyl or carboxydecyl groups efficiently inhibit the formation of SiO2, while the quality of the HfO2 layer (uniformity, permittivity) is not affected by the grafting. The flatband voltage in metal–oxide–semiconductor structures with films grown on methyl-grafted p-type Si(100) is shifted by an additional 100 to 300 mV compared to that with films grown on a chemical SiO2 oxide. This is in good agreement with the expected dipole effect related to the grafting of such molecules on silicon. The interfacial state density is comparable to the one measured on films grown on SiO2/Si. This study opens up the route for the engineering of the Si/high-κ oxide interface using organic grafting.

Journal or Publication Title: Chemistry of Materials
Journal volume: 24
Number: 16
Publisher: ACS Publications
Uncontrolled Keywords: high-κ dielectric, oxide, interface, organic, grafting, methyl
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 28 Nov 2013 12:22
Official URL: http://dx.doi.org/10.1021/cm301247v
Identification Number: doi:10.1021/cm301247v
Funders: Nevine Rochat from CEA-LETI is acknowledged for the access to the ATR. , Cle ment Gaumer from STMicroelectronics is acknowledged for his help with the ATR measurements., This study was carried out in the framework of the MEDEA + FOREMOST project with the continuous support of STMicroelectronics and of SAFC Hitech, The PhD thesis of Dorin Dusciac was supported by CNRS and STMicroelectronics.
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