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Silicon carbonitride nanolayers - Synthesis and chemical characterization

Hoffmann, P. S. and Fainer, N. I. and Baake, O. and Kosinova, M. L. and Rumyantsev, Y. M. and Trunova, V. A. and Klein, Andreas and Pollakowski, B. and Beckhoff, B. and Ensinger, W. (2012):
Silicon carbonitride nanolayers - Synthesis and chemical characterization.
In: Thin Solid Films, pp. 5906-5913, 520, (18), ISSN 00406090, [Online-Edition: http://www.sciencedirect.com/science/article/pii/S0040609012...],
[Article]

Abstract

SiCxNy thin films were produced by plasma-enhanced chemical vapor deposition and characterized by ellipsometry, Fourier transform infrared and Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, as well as, by near-edge X-ray absorption fine structure measurements in total-reflection X-ray fluorescence geometry. The temperature of synthesis was varied between 100 °C and 800 °C, the precursors hexamethyldisilazane or hexamethylcyclotrisilazane were used with an addition of N2, He, and NH3, respectively. The composition of the products was determined to be constant in Si with about 20 at.%, whereas the sum of C and N results in 80 at.% (each varying between 20 and 60 at.%). Consequently, it can be stated, that in the produced silicon carbonitride a network of Si is built with Sisingle bondCsingle bondSi, Sisingle bondCsingle bondCsingle bondSi, and Sisingle bondNsingle bondSi bridges. The comparison of the chemical composition and of the physical properties shows for the samples produced with He or N2, respectively (without NH3) that the refractive index and the absorption coefficient are increasing with an increasing content of carbon in the final formula SiC4 − nNn (with n = 1, 2, or 3).

Item Type: Article
Erschienen: 2012
Creators: Hoffmann, P. S. and Fainer, N. I. and Baake, O. and Kosinova, M. L. and Rumyantsev, Y. M. and Trunova, V. A. and Klein, Andreas and Pollakowski, B. and Beckhoff, B. and Ensinger, W.
Title: Silicon carbonitride nanolayers - Synthesis and chemical characterization
Language: English
Abstract:

SiCxNy thin films were produced by plasma-enhanced chemical vapor deposition and characterized by ellipsometry, Fourier transform infrared and Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, as well as, by near-edge X-ray absorption fine structure measurements in total-reflection X-ray fluorescence geometry. The temperature of synthesis was varied between 100 °C and 800 °C, the precursors hexamethyldisilazane or hexamethylcyclotrisilazane were used with an addition of N2, He, and NH3, respectively. The composition of the products was determined to be constant in Si with about 20 at.%, whereas the sum of C and N results in 80 at.% (each varying between 20 and 60 at.%). Consequently, it can be stated, that in the produced silicon carbonitride a network of Si is built with Sisingle bondCsingle bondSi, Sisingle bondCsingle bondCsingle bondSi, and Sisingle bondNsingle bondSi bridges. The comparison of the chemical composition and of the physical properties shows for the samples produced with He or N2, respectively (without NH3) that the refractive index and the absorption coefficient are increasing with an increasing content of carbon in the final formula SiC4 − nNn (with n = 1, 2, or 3).

Journal or Publication Title: Thin Solid Films
Volume: 520
Number: 18
Uncontrolled Keywords: Chemical vapor deposition, Energy dispersive X-ray spectrometry, Fourier transform infrared spectroscopy, Near edge X-ray absorption fine structure, Silicon carbonitrides, Speciation, Total reflection X-ray fluorescence, X-ray photoelectron spectroscopy
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science > Surface Science
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 18 Jun 2012 12:47
Official URL: http://www.sciencedirect.com/science/article/pii/S0040609012...
Identification Number: doi:10.1016/j.tsf.2012.04.082
Funders: The authors acknowledge the financial support granted by the Deutsche Forschungsgemeinschaft (DFG) for the research projects “Nanolayer Speciation” (EN 207/22-1, BE 1372/2-1) and “Chemical and Physical Characterization of Nanolayers”, (EN 207/22-2, BE 1372/2-2). The authors of the Russian Federation thank RFBR for the grant 07-03-91555-NNIO.
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