Hoffmann, P. S. ; Fainer, N. I. ; Baake, O. ; Kosinova, M. L. ; Rumyantsev, Y. M. ; Trunova, V. A. ; Klein, Andreas ; Pollakowski, B. ; Beckhoff, B. ; Ensinger, W. (2012)
Silicon carbonitride nanolayers - Synthesis and chemical characterization.
In: Thin Solid Films, 520 (18)
doi: 10.1016/j.tsf.2012.04.082
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
SiCxNy thin films were produced by plasma-enhanced chemical vapor deposition and characterized by ellipsometry, Fourier transform infrared and Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, as well as, by near-edge X-ray absorption fine structure measurements in total-reflection X-ray fluorescence geometry. The temperature of synthesis was varied between 100 °C and 800 °C, the precursors hexamethyldisilazane or hexamethylcyclotrisilazane were used with an addition of N2, He, and NH3, respectively. The composition of the products was determined to be constant in Si with about 20 at.%, whereas the sum of C and N results in 80 at.% (each varying between 20 and 60 at.%). Consequently, it can be stated, that in the produced silicon carbonitride a network of Si is built with Sisingle bondCsingle bondSi, Sisingle bondCsingle bondCsingle bondSi, and Sisingle bondNsingle bondSi bridges. The comparison of the chemical composition and of the physical properties shows for the samples produced with He or N2, respectively (without NH3) that the refractive index and the absorption coefficient are increasing with an increasing content of carbon in the final formula SiC4 − nNn (with n = 1, 2, or 3).
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Hoffmann, P. S. ; Fainer, N. I. ; Baake, O. ; Kosinova, M. L. ; Rumyantsev, Y. M. ; Trunova, V. A. ; Klein, Andreas ; Pollakowski, B. ; Beckhoff, B. ; Ensinger, W. |
| Art des Eintrags: | Bibliographie |
| Titel: | Silicon carbonitride nanolayers - Synthesis and chemical characterization |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Juli 2012 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Thin Solid Films |
| Jahrgang/Volume einer Zeitschrift: | 520 |
| (Heft-)Nummer: | 18 |
| DOI: | 10.1016/j.tsf.2012.04.082 |
| URL / URN: | http://www.sciencedirect.com/science/article/pii/S0040609012... |
| Kurzbeschreibung (Abstract): | SiCxNy thin films were produced by plasma-enhanced chemical vapor deposition and characterized by ellipsometry, Fourier transform infrared and Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, as well as, by near-edge X-ray absorption fine structure measurements in total-reflection X-ray fluorescence geometry. The temperature of synthesis was varied between 100 °C and 800 °C, the precursors hexamethyldisilazane or hexamethylcyclotrisilazane were used with an addition of N2, He, and NH3, respectively. The composition of the products was determined to be constant in Si with about 20 at.%, whereas the sum of C and N results in 80 at.% (each varying between 20 and 60 at.%). Consequently, it can be stated, that in the produced silicon carbonitride a network of Si is built with Sisingle bondCsingle bondSi, Sisingle bondCsingle bondCsingle bondSi, and Sisingle bondNsingle bondSi bridges. The comparison of the chemical composition and of the physical properties shows for the samples produced with He or N2, respectively (without NH3) that the refractive index and the absorption coefficient are increasing with an increasing content of carbon in the final formula SiC4 − nNn (with n = 1, 2, or 3). |
| Freie Schlagworte: | Chemical vapor deposition, Energy dispersive X-ray spectrometry, Fourier transform infrared spectroscopy, Near edge X-ray absorption fine structure, Silicon carbonitrides, Speciation, Total reflection X-ray fluorescence, X-ray photoelectron spectroscopy |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 18 Jun 2012 12:47 |
| Letzte Änderung: | 26 Mär 2015 20:15 |
| PPN: | |
| Sponsoren: | The authors acknowledge the financial support granted by the Deutsche Forschungsgemeinschaft (DFG) for the research projects “Nanolayer Speciation” (EN 207/22-1, BE 1372/2-1) and “Chemical and Physical Characterization of Nanolayers”, (EN 207/22-2, BE 1372/2-2). The authors of the Russian Federation thank RFBR for the grant 07-03-91555-NNIO. |
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