Krockenberger, Y. ; Kurian, J. ; Naito, M. ; Alff, L. (2008)
Epitaxial growth of Gd₂₋ₓCeₓCuO₄ thin films.
In: Journal of Physics: Conference Series, 108 (1)
doi: 10.1088/1742-6596/108/1/012041
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
We have grown (001)-oriented thin films of Gd₂₋ₓCeₓCuO₄ with cerium composition 0 < x < 0.2 by state-of-the-art reactive molecular beam epitaxy and characterized them by x-ray diffraction and transport measurements. A systematical change in the c-axis length upon cerium doping indicates that single-phase films were obtained for the whole doping range. Based on a log po₂ - 1/T phase diagram in combination with reflection high energy electron diffraction (RHEED), phase stability has been determined in order to achieve optimized reduction conditions. Gd₂₋ₓCeₓCuO₄ thin films even after controlled reductions treatment did not show superconductivity in the whole range of Ce concentration studied. However, the room temperature resistivity of optimally reduced Gd₂₋ₓCeₓCuO₄ thin films shows a minimum at around xCe = 0.16. Our results on the growth and characterization of Gd₂₋ₓCeₓCuO₄ thin films on (100) SrTiO3 substrates are described in detail.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2008 |
| Autor(en): | Krockenberger, Y. ; Kurian, J. ; Naito, M. ; Alff, L. |
| Art des Eintrags: | Bibliographie |
| Titel: | Epitaxial growth of Gd₂₋ₓCeₓCuO₄ thin films |
| Sprache: | Englisch |
| Publikationsjahr: | 1 März 2008 |
| Ort: | Bristol |
| Verlag: | IOP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Physics: Conference Series |
| Jahrgang/Volume einer Zeitschrift: | 108 |
| (Heft-)Nummer: | 1 |
| Kollation: | 6 Seiten |
| DOI: | 10.1088/1742-6596/108/1/012041 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | We have grown (001)-oriented thin films of Gd₂₋ₓCeₓCuO₄ with cerium composition 0 < x < 0.2 by state-of-the-art reactive molecular beam epitaxy and characterized them by x-ray diffraction and transport measurements. A systematical change in the c-axis length upon cerium doping indicates that single-phase films were obtained for the whole doping range. Based on a log po₂ - 1/T phase diagram in combination with reflection high energy electron diffraction (RHEED), phase stability has been determined in order to achieve optimized reduction conditions. Gd₂₋ₓCeₓCuO₄ thin films even after controlled reductions treatment did not show superconductivity in the whole range of Ce concentration studied. However, the room temperature resistivity of optimally reduced Gd₂₋ₓCeₓCuO₄ thin films shows a minimum at around xCe = 0.16. Our results on the growth and characterization of Gd₂₋ₓCeₓCuO₄ thin films on (100) SrTiO3 substrates are described in detail. |
| Zusätzliche Informationen: | INTERNATIONAL SYMPOSIUM ON LATTICE EFFECTS IN CUPRATE HIGH TEMPERATURE SUPERCONDUCTORS (LEHTSC2007) 31 October to 3 November 2007, Tsukuba, Japan |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 500 Naturwissenschaften |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten |
| Hinterlegungsdatum: | 23 Jan 2024 09:05 |
| Letzte Änderung: | 23 Jan 2024 09:05 |
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Epitaxial growth of Gd₂₋ₓCeₓCuO₄ thin films. (deposited 22 Jan 2024 12:49)
- Epitaxial growth of Gd₂₋ₓCeₓCuO₄ thin films. (deposited 23 Jan 2024 09:05) [Gegenwärtig angezeigt]
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