Koslowski, Nico ; Hoffmann, Rudolf C. ; Trouillet, Vanessa ; Bruns, Michael ; Foro, Sabine ; Schneider, Jörg J. (2022)
Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route.
In: RSC Advances, 2019, 9 (54)
doi: 10.26083/tuprints-00013229
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO₂1) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1–3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 °C, with areal capacity values up to 250 nF cm⁻², leakage current densities below 1.0 × 10⁻⁹ A cm⁻² (at 1 MV cm⁻¹) and breakdown voltages above 2 MV cm⁻¹. Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed YxOy based TFT was fabricated employing the precursor Y-DEM-NO21. The device exhibits decent TFT characteristics with a saturation mobility (μsat) of 2.1 cm² V⁻¹ s⁻¹, a threshold voltage (Vth) of 6.9 V and an on/off current ratio (Ion/off) of 7.6 × 10⁵.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2022 |
| Autor(en): | Koslowski, Nico ; Hoffmann, Rudolf C. ; Trouillet, Vanessa ; Bruns, Michael ; Foro, Sabine ; Schneider, Jörg J. |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route |
| Sprache: | Englisch |
| Publikationsjahr: | 2022 |
| Publikationsdatum der Erstveröffentlichung: | 2019 |
| Verlag: | Royal Society of Chemistry |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | RSC Advances |
| Jahrgang/Volume einer Zeitschrift: | 9 |
| (Heft-)Nummer: | 54 |
| DOI: | 10.26083/tuprints-00013229 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/13229 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichung |
| Kurzbeschreibung (Abstract): | Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO₂1) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1–3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 °C, with areal capacity values up to 250 nF cm⁻², leakage current densities below 1.0 × 10⁻⁹ A cm⁻² (at 1 MV cm⁻¹) and breakdown voltages above 2 MV cm⁻¹. Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed YxOy based TFT was fabricated employing the precursor Y-DEM-NO21. The device exhibits decent TFT characteristics with a saturation mobility (μsat) of 2.1 cm² V⁻¹ s⁻¹, a threshold voltage (Vth) of 6.9 V and an on/off current ratio (Ion/off) of 7.6 × 10⁵. |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-132296 |
| Zusätzliche Informationen: | Electronic supplementary information: https://t1p.de/h3p8t |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 540 Chemie |
| Fachbereich(e)/-gebiet(e): | 07 Fachbereich Chemie 07 Fachbereich Chemie > Eduard Zintl-Institut > Fachgebiet Anorganische Chemie 07 Fachbereich Chemie > Eduard Zintl-Institut |
| Hinterlegungsdatum: | 28 Mär 2022 12:19 |
| Letzte Änderung: | 03 Jul 2024 02:47 |
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| Suche nach Titel in: | TUfind oder in Google |
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- Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route. (deposited 28 Mär 2022 12:19) [Gegenwärtig angezeigt]
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