Sträter, Hendrik ; Brüggemann, R. ; Siol, S. ; Klein, Andreas ; Jaegermann, Wolfram ; Bauer, G. H. (2021)
Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels.
In: Journal of Applied Physics, 2013, 114 (23)
doi: 10.26083/tuprints-00019912
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
We have studied chalcocite (Cu₂S) layers prepared by physical vapor deposition with varying deposition parameters by calibrated spectral photoluminescence (PL) and by confocal PL with lateral resolution of Δ x≈0.9 μm. Calibrated PL experiments as a function of temperature T and excitation fluxes were performed to obtain the absolute PL-yield and to calculate the splitting of the quasi-Fermi levels (QFLs) μ=Ef,n−Ef,p at an excitation flux equivalent to the AM 1.5 spectrum and the absorption coefficient α(ℏω), both in the temperature range of 20 K≤T≤400 K. The PL-spectra reveal two peaks at E#1=1.17 eV and E#2=1.3 eV. The samples show a QFL-splitting of μ>700 meV associated with a pseudo band gap of Eg=1.25 eV. The high-energy peak shows an unexpected temperature behavior, namely, an increase of PL-yield with rising temperature at variance with the behavior of QFL-splitting that decreases with rising T.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2021 |
| Autor(en): | Sträter, Hendrik ; Brüggemann, R. ; Siol, S. ; Klein, Andreas ; Jaegermann, Wolfram ; Bauer, G. H. |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels |
| Sprache: | Englisch |
| Publikationsjahr: | 2021 |
| Publikationsdatum der Erstveröffentlichung: | 2013 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 114 |
| (Heft-)Nummer: | 23 |
| Kollation: | 8 Seiten |
| DOI: | 10.26083/tuprints-00019912 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/19912 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichungsservice |
| Kurzbeschreibung (Abstract): | We have studied chalcocite (Cu₂S) layers prepared by physical vapor deposition with varying deposition parameters by calibrated spectral photoluminescence (PL) and by confocal PL with lateral resolution of Δ x≈0.9 μm. Calibrated PL experiments as a function of temperature T and excitation fluxes were performed to obtain the absolute PL-yield and to calculate the splitting of the quasi-Fermi levels (QFLs) μ=Ef,n−Ef,p at an excitation flux equivalent to the AM 1.5 spectrum and the absorption coefficient α(ℏω), both in the temperature range of 20 K≤T≤400 K. The PL-spectra reveal two peaks at E#1=1.17 eV and E#2=1.3 eV. The samples show a QFL-splitting of μ>700 meV associated with a pseudo band gap of Eg=1.25 eV. The high-energy peak shows an unexpected temperature behavior, namely, an increase of PL-yield with rising temperature at variance with the behavior of QFL-splitting that decreases with rising T. |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-199128 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 16 Nov 2021 12:30 |
| Letzte Änderung: | 17 Nov 2021 06:20 |
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| Suche nach Titel in: | TUfind oder in Google |
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- Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels. (deposited 16 Nov 2021 12:30) [Gegenwärtig angezeigt]
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