Ricohermoso, Emmanuel ; Klug, Florian ; Schlaak, Helmut ; Riedel, Ralf ; Ionescu, Emanuel (2021)
Compressive thermal stress and microstructure-driven charge carrier transport in silicon oxycarbide thin films.
In: Journal of the European Ceramic Society, 41 (13)
doi: 10.1016/j.jeurceramsoc.2021.07.001
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
This work correlates the charge carrier transport mechanism of silicon oxycarbide-based thin films with their morphology and thermal stress. Segregation of highly-graphitized carbon-rich, oxygen-depleted C/SiC areas homogeneously dispersed within an oxygen-rich C/SiOC matrix was seen on the 500 nm-SiOC thin films. Compressive biaxial stress induced by the mismatch with the Si-substrate thermal expansion coefficient was calculated at 109 MPa. Through Hall measurements, p-type carriers were shown dominating the SiOC film similar to monolithic samples. Thin films and monoliths have comparable carrier concentrations while the carrier mobility in SiOC thin films was 2 magnitudes higher than that of monolithic samples and is considered a consequence of the compressive thermal stress acting on the film. Improved conductivity of 16 S cm-1 is measured for the SiOC thin film sample which is assumed considering the enhanced carrier mobility alongside the reduced percolation threshold ascribed to the phase-separated morphology of the thin film.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2021 |
| Autor(en): | Ricohermoso, Emmanuel ; Klug, Florian ; Schlaak, Helmut ; Riedel, Ralf ; Ionescu, Emanuel |
| Art des Eintrags: | Bibliographie |
| Titel: | Compressive thermal stress and microstructure-driven charge carrier transport in silicon oxycarbide thin films |
| Sprache: | Englisch |
| Publikationsjahr: | Oktober 2021 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of the European Ceramic Society |
| Jahrgang/Volume einer Zeitschrift: | 41 |
| (Heft-)Nummer: | 13 |
| DOI: | 10.1016/j.jeurceramsoc.2021.07.001 |
| URL / URN: | https://doi.org/10.1016/j.jeurceramsoc.2021.07.001 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | This work correlates the charge carrier transport mechanism of silicon oxycarbide-based thin films with their morphology and thermal stress. Segregation of highly-graphitized carbon-rich, oxygen-depleted C/SiC areas homogeneously dispersed within an oxygen-rich C/SiOC matrix was seen on the 500 nm-SiOC thin films. Compressive biaxial stress induced by the mismatch with the Si-substrate thermal expansion coefficient was calculated at 109 MPa. Through Hall measurements, p-type carriers were shown dominating the SiOC film similar to monolithic samples. Thin films and monoliths have comparable carrier concentrations while the carrier mobility in SiOC thin films was 2 magnitudes higher than that of monolithic samples and is considered a consequence of the compressive thermal stress acting on the film. Improved conductivity of 16 S cm-1 is measured for the SiOC thin film sample which is assumed considering the enhanced carrier mobility alongside the reduced percolation threshold ascribed to the phase-separated morphology of the thin film. |
| Freie Schlagworte: | Polymer derived ceramics; Conductivity; Hall effect measurement; POLYMER-DERIVED CERAMICS; X-RAY-DIFFRACTION; ELECTRICAL-CONDUCTIVITY; BIAXIAL STRAIN; ELECTRONIC-PROPERTIES; CARBON; RAMAN; GRAPHENE; MONOLAYER; GRAPHITE |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Mikrotechnik und Elektromechanische Systeme |
| TU-Projekte: | DFG|IO64/14-1|Heisenberg-Förderung |
| Hinterlegungsdatum: | 18 Aug 2021 05:46 |
| Letzte Änderung: | 18 Aug 2021 05:46 |
| PPN: | |
| Zugehörige Links: | |
| Projekte: | German Research Foundation (DFG), Grant Number 411658150, German Research Foundation (DFG) European Commission, Grant Number IO 64/14-1 |
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