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Compressive thermal stress and microstructure-driven charge carrier transport in silicon oxycarbide thin films

Ricohermoso, Emmanuel ; Klug, Florian ; Schlaak, Helmut ; Riedel, Ralf ; Ionescu, Emanuel (2021):
Compressive thermal stress and microstructure-driven charge carrier transport in silicon oxycarbide thin films.
In: Journal of the European Ceramic Society, 41 (13), pp. 6377-6384. Elsevier, ISSN 0955-2219, e-ISSN 1873-619X,
DOI: 10.1016/j.jeurceramsoc.2021.07.001,
[Article]

Abstract

This work correlates the charge carrier transport mechanism of silicon oxycarbide-based thin films with their morphology and thermal stress. Segregation of highly-graphitized carbon-rich, oxygen-depleted C/SiC areas homogeneously dispersed within an oxygen-rich C/SiOC matrix was seen on the 500 nm-SiOC thin films. Compressive biaxial stress induced by the mismatch with the Si-substrate thermal expansion coefficient was calculated at 109 MPa. Through Hall measurements, p-type carriers were shown dominating the SiOC film similar to monolithic samples. Thin films and monoliths have comparable carrier concentrations while the carrier mobility in SiOC thin films was 2 magnitudes higher than that of monolithic samples and is considered a consequence of the compressive thermal stress acting on the film. Improved conductivity of 16 S cm-1 is measured for the SiOC thin film sample which is assumed considering the enhanced carrier mobility alongside the reduced percolation threshold ascribed to the phase-separated morphology of the thin film.

Item Type: Article
Erschienen: 2021
Creators: Ricohermoso, Emmanuel ; Klug, Florian ; Schlaak, Helmut ; Riedel, Ralf ; Ionescu, Emanuel
Title: Compressive thermal stress and microstructure-driven charge carrier transport in silicon oxycarbide thin films
Language: English
Abstract:

This work correlates the charge carrier transport mechanism of silicon oxycarbide-based thin films with their morphology and thermal stress. Segregation of highly-graphitized carbon-rich, oxygen-depleted C/SiC areas homogeneously dispersed within an oxygen-rich C/SiOC matrix was seen on the 500 nm-SiOC thin films. Compressive biaxial stress induced by the mismatch with the Si-substrate thermal expansion coefficient was calculated at 109 MPa. Through Hall measurements, p-type carriers were shown dominating the SiOC film similar to monolithic samples. Thin films and monoliths have comparable carrier concentrations while the carrier mobility in SiOC thin films was 2 magnitudes higher than that of monolithic samples and is considered a consequence of the compressive thermal stress acting on the film. Improved conductivity of 16 S cm-1 is measured for the SiOC thin film sample which is assumed considering the enhanced carrier mobility alongside the reduced percolation threshold ascribed to the phase-separated morphology of the thin film.

Journal or Publication Title: Journal of the European Ceramic Society
Journal volume: 41
Number: 13
Publisher: Elsevier
Uncontrolled Keywords: Polymer derived ceramics; Conductivity; Hall effect measurement; POLYMER-DERIVED CERAMICS; X-RAY-DIFFRACTION; ELECTRICAL-CONDUCTIVITY; BIAXIAL STRAIN; ELECTRONIC-PROPERTIES; CARBON; RAMAN; GRAPHENE; MONOLAYER; GRAPHITE
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microtechnology and Electromechanical Systems
TU-Projects: DFG|IO64/14-1|Heisenberg-Förderung
Date Deposited: 18 Aug 2021 05:46
DOI: 10.1016/j.jeurceramsoc.2021.07.001
Official URL: https://doi.org/10.1016/j.jeurceramsoc.2021.07.001
Corresponding Links:
Projects: German Research Foundation (DFG), Grant Number 411658150, German Research Foundation (DFG) European Commission, Grant Number IO 64/14-1
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