Niu, Gang ; Calka, Pauline ; Huang, Peng ; Sharath, Sankaramangalam Ulhas ; Petzold, Stefan ; Gloskovskii, Andrei ; Fröhlich, Karol ; Zhao, Yudi ; Kang, Jinfeng ; Schubert, Markus Andreas ; Bärwolf, Florian ; Ren, Wei ; Ye, Zuo-Guang ; Perez, Eduardo ; Wenger, Christian ; Alff, Lambert ; Schroeder, Thomas (2019)
Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy.
In: Materials Research Letters, 7 (3)
doi: 10.1080/21663831.2018.1561535
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2019 |
| Autor(en): | Niu, Gang ; Calka, Pauline ; Huang, Peng ; Sharath, Sankaramangalam Ulhas ; Petzold, Stefan ; Gloskovskii, Andrei ; Fröhlich, Karol ; Zhao, Yudi ; Kang, Jinfeng ; Schubert, Markus Andreas ; Bärwolf, Florian ; Ren, Wei ; Ye, Zuo-Guang ; Perez, Eduardo ; Wenger, Christian ; Alff, Lambert ; Schroeder, Thomas |
| Art des Eintrags: | Bibliographie |
| Titel: | Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy |
| Sprache: | Englisch |
| Publikationsjahr: | 2019 |
| Verlag: | Taylor & Francis Inc., Philadelphia, PA, USA |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Materials Research Letters |
| Jahrgang/Volume einer Zeitschrift: | 7 |
| (Heft-)Nummer: | 3 |
| DOI: | 10.1080/21663831.2018.1561535 |
| URL / URN: | https://doi.org/10.1080/21663831.2018.1561535 |
| Kurzbeschreibung (Abstract): | The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices. |
| Freie Schlagworte: | HAXPES, resistive switching, interface, RRAM, HfO2 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten |
| Hinterlegungsdatum: | 23 Jan 2019 08:22 |
| Letzte Änderung: | 23 Jan 2019 08:22 |
| PPN: | |
| Sponsoren: | Deutsche Forschungsgemeinschaft (DFG, RRAM project SCHR 1123/7-2 and AL 560/13-2), Natural Science Foundation of China (grant number 51602247), Natural Science Fundamental Research Project of Shaanxi Province of China (No. 2017JQ6003), Fundamental Research Funds for the Central Universities, Natural Sciences and Engineering Research Council of Canada (NSERC DG grant number 203773) |
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