Zhou, Y. ; Yan, X. ; Kroke, E. ; Riedel, R. ; Probst, D. ; Thissen, A. ; Hauser, R. ; Ahles, M. ; Seggern, H. von (2006)
Deposition Temperature Effect on the Structure and Optical Property of RF-PACVD-Derived Hydrogenated SiCNO Film.
In: Materialwissenschaft und Werkstofftechnik, 37 (2)
doi: 10.1002/mawe.200600993
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Amorphous hydrogenated silicon oxocarbonitride (SiCNO:H) films have been deposited by plasma‐assisted chemical vapour deposition (PACVD) using bis(trimethylsilyl)carbodiimide (BTSC) as a single source precursor in a argon (Ar) radio‐frequency plasma. In this work the SiCNO:H films deposited at different deposition temperatures were studied in terms of deposition rate, refractive index, surface roughness, microstructure, and chemical composition including bonding state. The results showed that a higher deposition temperature enhanced the formation of Si‐N bonds, and disfavoured the formation of N=C=N, Si‐NCN, C‐H and Si‐CH3 bonds. A higher deposition temperature also decreased the deposition rate and increased the refractive index of the resulting SiCNO:H film. With increasing temperature a denser film was formed, indicating a change of the deposition mechanism, i.e., transformation from particle precipitation to heterogeneous surface reaction. Except for the coatings deposited at room temperature, the surface of the films was smooth with a roughness of around 4 nm at the centre in the range of 5 μm x 5 μm area. Moreover, the films contained 8 ∼ 16 at.% oxygen bonded to Si, which originated from the remnant H2O in the deposition chamber.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2006 |
| Autor(en): | Zhou, Y. ; Yan, X. ; Kroke, E. ; Riedel, R. ; Probst, D. ; Thissen, A. ; Hauser, R. ; Ahles, M. ; Seggern, H. von |
| Art des Eintrags: | Bibliographie |
| Titel: | Deposition Temperature Effect on the Structure and Optical Property of RF-PACVD-Derived Hydrogenated SiCNO Film |
| Sprache: | Englisch |
| Publikationsjahr: | 21 Februar 2006 |
| Verlag: | Wiley-VCH Verlag GmbH, Weinheim |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Materialwissenschaft und Werkstofftechnik |
| Jahrgang/Volume einer Zeitschrift: | 37 |
| (Heft-)Nummer: | 2 |
| DOI: | 10.1002/mawe.200600993 |
| URL / URN: | https://doi.org/10.1002/mawe.200600993 |
| Kurzbeschreibung (Abstract): | Amorphous hydrogenated silicon oxocarbonitride (SiCNO:H) films have been deposited by plasma‐assisted chemical vapour deposition (PACVD) using bis(trimethylsilyl)carbodiimide (BTSC) as a single source precursor in a argon (Ar) radio‐frequency plasma. In this work the SiCNO:H films deposited at different deposition temperatures were studied in terms of deposition rate, refractive index, surface roughness, microstructure, and chemical composition including bonding state. The results showed that a higher deposition temperature enhanced the formation of Si‐N bonds, and disfavoured the formation of N=C=N, Si‐NCN, C‐H and Si‐CH3 bonds. A higher deposition temperature also decreased the deposition rate and increased the refractive index of the resulting SiCNO:H film. With increasing temperature a denser film was formed, indicating a change of the deposition mechanism, i.e., transformation from particle precipitation to heterogeneous surface reaction. Except for the coatings deposited at room temperature, the surface of the films was smooth with a roughness of around 4 nm at the centre in the range of 5 μm x 5 μm area. Moreover, the films contained 8 ∼ 16 at.% oxygen bonded to Si, which originated from the remnant H2O in the deposition chamber. |
| Freie Schlagworte: | Amorphous SiCNO:H, RF‐PACVD, Structure, Optical Properties, Amorphes Si‐CNO:H, RF‐PACVD, Struktur, optische Eigenschaften |
| Zusätzliche Informationen: | Dedicated to Dr. E. Broszeit on the occasion of his 65th birthday. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Elektronische Materialeigenschaften |
| Hinterlegungsdatum: | 17 Dez 2018 13:01 |
| Letzte Änderung: | 13 Aug 2021 14:08 |
| PPN: | |
| Sponsoren: | This work woas funded by the DFG within the framework of DFG-SPP1119:“InorganicMaterialsbyGasPhaseDeposition: Interdisciplinary Approaches to Development, Understanding and Control of CVD-Techniques”. |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum