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Number of items: 5.

Saito, T. R. and Saito, N. and Starosta, K. and Beller, J. and Pietralla, N. and Wollersheim, H.-J. and Balabanski, D. L. and Banu, A. and Bark, R. A. and Beck, T. and Becker, F. and Bednarczyk, P. and Behr, K. H. and Benzoni, G. and Bizzeti, P. G. and Boiano, C. and Bracco, A. and Brambilla, S. and Brünle, A. and Bürger, A. and Caceres, L. and Camera, F. and Crespi, F. C. L. and Doornenbal, P. and Garnsworthy, A. B. and Geissel, H. and Gerl, J. and Gorska, M. and Grebosz, J. and Hagemann, G. and Jolie, J. and Kavatsyuk, M. and Kavatsyuk, O. and Koike, T. and Kojouharov, I. and Kurz, N. and Leske, J. and Lo Bianco, G. and Maj, B. and Mallion, S. and Mandal, S. and Maliage, M. and Otsuka, T. and Petrache, C. M. and Podolyak, Z. and Prokopowicz, W. and Rainovski, G. and Reiter, P. and Richard, A. and Schaffner, H. and Schielke, S. and Sletten, G. and Thompson, N. J. and Tonev, D. and Walker, J. and Warr, N. and Wieland, O. and Zhong, Q. (2008):
Yrast and non-yrast 2+ states of 134Ce and 136Nd populated in relativistic Coulomb excitation.
In: Physics Letters B, p. 19, 669, (1), ISSN 03702693,
[Online-Edition: http://dx.doi.org/10.1016/j.physletb.2008.09.027],
[Article]

Khanna, V. K. and Kumar, A. and Sood, S. C. and Gupta, R. P. and Jasuja, K. L. and Maj, B. and Kostka, A. (2001):
Investigation of degeneracy of current-voltage characteristics of asymmetrical IGBT with N-Buffer layer concentration.
In: Solid state electronics, pp. S.1859-1865, 45, [Article]

Khanna, V. K. and Kumar, A. and Maj, B. and Kostka, A. and Sood, S. C. and Gupta, R. P. and Jasuja, K. L. (2001):
Physical insight into thermal behaviour of power DMOSFET and IGBT: a two dimensional computer simulation study.
In: Physica status solidi, pp. S.309-329, A 185, [Article]

Khanna, V. K. and Kumar, A. and Sood, S. C. and Gupta, R. P. and Jasuja, K. L. and Maj, B. and Kostka, A. (2001):
Power IGBT design and characterization by two-dimensional thermal simulation.
New Delhi, Allied Publishers 2001, In: International Workshop on the Physics of Semiconductor Devices (IWPSD) <11, 2001, Delhi>: Proceedings. - New Delhi: Allied Publishers 2001, S.436-439, [Conference or Workshop Item]

Kumar, A. and Khanna, V. K. and Gupta, R. P. and Jasuja, K. L. and Maj, B. and Kostka, A. (1999):
2-D simulation studies of avalanche breakdown in power DMOSFET structures with multiple field rings.
In: International Workshop on Physics of Semiconductor Devices <10, 1999, Delhi>: Proceedings, [Conference or Workshop Item]

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