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Ebene hoch |
2010
Lebedev, M. V. ; Mankel, E. ; Mayer, T. ; Jaegermann, W. (2010)
SXPS study of model GaAs(100)/electrolyte interface.
In: physica status solidi (c), 7 (2)
doi: 10.1002/pssc.200982439
Artikel, Bibliographie
2009
Lebedev, M. V. ; Mankel, E. ; Mayer, T. ; Jaegermann, W. (2009)
Interaction of 2-Propanol with the GaAs(100) Surface.
In: The Journal of Physical Chemistry C, 113 (47)
doi: 10.1021/jp907251w
Artikel, Bibliographie
2008
Lebedev, M. V. ; Mankel, E. ; Mayer, T. ; Jaegermann, W. (2008)
Wet Etching of GaAs(100) in Acidic and Basic Solutions: A Synchrotron−Photoemission Spectroscopy Study.
In: The Journal of Physical Chemistry C, 112 (47)
doi: 10.1021/jp805568t
Artikel, Bibliographie
2006
Mayer, T. ; Lebedev, M. V. ; Hunger, R. ; Jaegermann, W. (2006)
Synchrotron Photoemission Analysis of Semiconductor/Electrolyte Interfaces by the Frozen-Electrolyte Approach: Interaction of HCl in 2-Propanol with GaAs(100).
In: The Journal of Physical Chemistry B, 110 (5)
doi: 10.1021/jp056375u
Artikel, Bibliographie
2005
Hunger, R. ; Schulmeyer, T. ; Klein, Andreas ; Jaegermann, W. ; Lebedev, M. V. ; Sakurai, K. ; Niki, S. (2005)
SXPS investigation of the Cd partial electrolyte treatment of CuInSe2 absorbers.
Proceedings of Symposium O on Thin Film Chalcogenide Photovoltaic Materials, EMRS 2004. Strasbourg, France (24.05.2004-28.05.2004)
doi: 10.1016/j.tsf.2004.11.115
Konferenzveröffentlichung, Bibliographie
2004
Lebedev, M. V. ; Mayer, T. ; Jaegermann, W. (2004)
Adsorption of Solvated Hydrosulfide Ions at a GaAs(100) Surface: The Role of a Solvent in Surface Structure Modification.
In: Semiconductors, 38 (2)
doi: 10.1134/1.1648366
Artikel, Bibliographie