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Spatially Resolved Electrostatic Potential and Photocurrent Generation in Carbon Nanotube Array Devices

Engel, Michael ; Steiner, Mathias ; Sundaram, Ravi S. ; Krupke, Ralph ; Green, Alexander A. ; Hersam, Mark C. ; Avouris, Phaedon (2012)
Spatially Resolved Electrostatic Potential and Photocurrent Generation in Carbon Nanotube Array Devices.
In: ACS Nano
doi: 10.1021/nn302416e
Article, Bibliographie

Abstract

We have used laser-excited photocurrent microscopy to map the internal electrostatic potential profile of semiconducting single-walled carbon nanotube (S-SWCNT) array devices with a spatial resolution of 250 nm. The measurements of S-SWCNTs on optically transparent samples provide new insights into the physical principles of device operation and reveal performance-limiting local heterogeneities in the electrostatic potential profile not observable with other imaging techniques. The experiments deliver photocurrent images from the underside of the S-SWCNT–metal contacts and thus enable the direct measurement of the charge carrier transfer lengths at the palladium–S-SWCNT and aluminum–S-SWCNT interfaces. We use the experimental results to formulate design rules for optimized layouts of S-SWCNT-based photovoltaic devices. Furthermore, we demonstrate the external control of the electrostatic potential profile in S-SWCNT array devices equipped with local metal gates.

Item Type: Article
Erschienen: 2012
Creators: Engel, Michael ; Steiner, Mathias ; Sundaram, Ravi S. ; Krupke, Ralph ; Green, Alexander A. ; Hersam, Mark C. ; Avouris, Phaedon
Type of entry: Bibliographie
Title: Spatially Resolved Electrostatic Potential and Photocurrent Generation in Carbon Nanotube Array Devices
Language: English
Date: 7 July 2012
Journal or Publication Title: ACS Nano
DOI: 10.1021/nn302416e
Abstract:

We have used laser-excited photocurrent microscopy to map the internal electrostatic potential profile of semiconducting single-walled carbon nanotube (S-SWCNT) array devices with a spatial resolution of 250 nm. The measurements of S-SWCNTs on optically transparent samples provide new insights into the physical principles of device operation and reveal performance-limiting local heterogeneities in the electrostatic potential profile not observable with other imaging techniques. The experiments deliver photocurrent images from the underside of the S-SWCNT–metal contacts and thus enable the direct measurement of the charge carrier transfer lengths at the palladium–S-SWCNT and aluminum–S-SWCNT interfaces. We use the experimental results to formulate design rules for optimized layouts of S-SWCNT-based photovoltaic devices. Furthermore, we demonstrate the external control of the electrostatic potential profile in S-SWCNT array devices equipped with local metal gates.

Uncontrolled Keywords: nanoelectronics; nano-optics; self-assembly
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Fachgebiet Molekulare Nanostrukturen
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 16 Aug 2012 07:01
Last Modified: 05 Mar 2013 10:02
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