| Item Type: |
Conference or Workshop Item
|
| Erschienen: |
1996 |
| Creators: |
Klös, Alexander |
| Type of entry: |
Bibliographie |
| Title: |
A physics based, analytical model for the threshold voltage in MOSFET's using a unified approach to account for short- and narrow-channel effects |
| Language: |
English |
| Date: |
1 January 1996 |
| Series: |
International Electron Devices Meeting <1996, Hsinchu, Taiwan>: Proceedings. S. 285-288 |
| Divisions: |
18 Department of Electrical Engineering and Information Technology |
| Date Deposited: |
19 Nov 2008 16:00 |
| Last Modified: |
05 Mar 2013 08:35 |
| PPN: |
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| Export: |
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