Hoffmann, P. ; Baake, O. ; Beckhoff, B. ; Ensinger, W. ; Fainer, N. ; Klein, Andreas ; Kosinova, M. ; Pollakowski, B. ; Trunova, V. ; Ulm, G. ; Weser, J. (2007):
Chemical bonding in carbonitride nanolayers.
In: Nuclear Instruments and Methods in Physics Research Section A, 575 (1-2), pp. 78-84. Elsevier, [Article]
Abstract
First results are presented for the identification of chemical bonds and structures (speciation) in boron and silicon carbonitrides, produced as layers of some hundred nm. The boron carbonitride (BCxNy) films are synthesized by low-pressure chemical vapor deposition (LPCVD) using the precursor substance trimethylamine borane. The samples of silicon carbonitride (SiCxNy) films are synthesized by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyl disilazane. The measurements were performed by total reflection X-ray fluorescence analysis combined with near-edge X-ray absorption fine structure investigations (TXRF-NEXAFS) and by X-ray photo-electron spectroscopy (XPS). The results are compared with those obtained for standard samples boron carbide (B4C), boron nitride (e.g., h-BN, c-BN), silicon carbide (SiC), and silicon nitride (Si3N4).
Item Type: | Article |
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Erschienen: | 2007 |
Creators: | Hoffmann, P. ; Baake, O. ; Beckhoff, B. ; Ensinger, W. ; Fainer, N. ; Klein, Andreas ; Kosinova, M. ; Pollakowski, B. ; Trunova, V. ; Ulm, G. ; Weser, J. |
Title: | Chemical bonding in carbonitride nanolayers |
Language: | English |
Abstract: | First results are presented for the identification of chemical bonds and structures (speciation) in boron and silicon carbonitrides, produced as layers of some hundred nm. The boron carbonitride (BCxNy) films are synthesized by low-pressure chemical vapor deposition (LPCVD) using the precursor substance trimethylamine borane. The samples of silicon carbonitride (SiCxNy) films are synthesized by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyl disilazane. The measurements were performed by total reflection X-ray fluorescence analysis combined with near-edge X-ray absorption fine structure investigations (TXRF-NEXAFS) and by X-ray photo-electron spectroscopy (XPS). The results are compared with those obtained for standard samples boron carbide (B4C), boron nitride (e.g., h-BN, c-BN), silicon carbide (SiC), and silicon nitride (Si3N4). |
Journal or Publication Title: | Nuclear Instruments and Methods in Physics Research Section A |
Volume of the journal: | 575 |
Issue Number: | 1-2 |
Publisher: | Elsevier |
Uncontrolled Keywords: | Chemical bonding; Boron carbonitrides; Silicon carbonitrides; X-ray fluorescence analysis |
Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Material Analytics 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
Date Deposited: | 20 Nov 2008 08:28 |
Additional Information: | Proceedings of the XVI International Synchrotron Radiation Conference — SR 2006 |
PPN: | |
Funders: | The authors acknowledge the financial support granted by the German Research Foundation (DFG) for the joint research project “Nanolayer Speciation”., N.F., M.K., and V.T. thank RFBR for the Grant 06-03 32713 and Minobrnauka for the support of the leading scientific schools, by the Contract No. 02.445.11.7387., The authors are indebted to T. Holz, AXO Dresden, and P.U. Pennartz, Osmic, for placing a BN nanolayer and a B4C/SiC multiplayer, resp., to our disposal. |
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