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Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model

Miranda, E. ; Piros, E. ; Aguirre, F. L. ; Kim, T. ; Schreyer, P. ; Gehrunger, J. ; Oster, T. ; Hofmann, K. ; Suñé, J. ; Hochberger, C. ; Alff, L. (2023)
Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model.
In: IEEE Electron Device Letters, 44 (9)
doi: 10.1109/LED.2023.3298023
Article, Bibliographie

Item Type: Article
Erschienen: 2023
Creators: Miranda, E. ; Piros, E. ; Aguirre, F. L. ; Kim, T. ; Schreyer, P. ; Gehrunger, J. ; Oster, T. ; Hofmann, K. ; Suñé, J. ; Hochberger, C. ; Alff, L.
Type of entry: Bibliographie
Title: Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model
Language: English
Date: 24 July 2023
Place of Publication: New York, NY
Publisher: IEEE
Journal or Publication Title: IEEE Electron Device Letters
Volume of the journal: 44
Issue Number: 9
DOI: 10.1109/LED.2023.3298023
Uncontrolled Keywords: mathematical models, voltage, switches, differential equations, integrated circuit modeling, resistance, numerical models, memristor, resistive switching, ReRAM, OxRAM
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute of Computer Engineering
18 Department of Electrical Engineering and Information Technology > Institute of Computer Engineering > Computer Systems Group
Date Deposited: 13 Mar 2024 06:44
Last Modified: 14 Mar 2024 07:26
PPN: 516286935
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