Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model

Miranda, E. ; Piros, E. ; Aguirre, F. L. ; Kim, T. ; Schreyer, P. ; Gehrunger, J. ; Oster, T. ; Hofmann, K. ; Suñé, J. ; Hochberger, C. ; Alff, L. (2023)
Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model.
In: IEEE Electron Device Letters, 44 (9)
doi: 10.1109/LED.2023.3298023
Article, Bibliographie

Item Type:	Article
Erschienen:	2023
Creators:	Miranda, E. ; Piros, E. ; Aguirre, F. L. ; Kim, T. ; Schreyer, P. ; Gehrunger, J. ; Oster, T. ; Hofmann, K. ; Suñé, J. ; Hochberger, C. ; Alff, L.
Type of entry:	Bibliographie
Title:	Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model
Language:	English
Date:	24 July 2023
Place of Publication:	New York, NY
Publisher:	IEEE
Journal or Publication Title:	IEEE Electron Device Letters
Volume of the journal:	44
Issue Number:	9
DOI:	10.1109/LED.2023.3298023
Uncontrolled Keywords:	mathematical models, voltage, switches, differential equations, integrated circuit modeling, resistance, numerical models, memristor, resistive switching, ReRAM, OxRAM
Divisions:	11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute of Computer Engineering 18 Department of Electrical Engineering and Information Technology > Institute of Computer Engineering > Integrated Electronic Systems (IES) 18 Department of Electrical Engineering and Information Technology > Institute of Computer Engineering > Computer Systems Group
Date Deposited:	13 Mar 2024 06:44
Last Modified:	09 Aug 2024 10:48
PPN:	516286935
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