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Operando two-terminal devices inside a transmission electron microscope

Recalde-Benitez, Oscar ; Jiang, Tianshu ; Winkler, Robert ; Ruan, Yating ; Zintler, Alexander ; Adabifiroozjaei, Esmaeil ; Arzumanov, Alexey ; Hubbard, William A. ; Omme, Tijn van ; Pivak, Yevheniy ; Perez-Garza, Hector H. ; Regan, B.C. ; Alff, Lambert ; Komissinskiy, Philipp ; Molina-Luna, Leopoldo (2023)
Operando two-terminal devices inside a transmission electron microscope.
In: Communications Engineering, 2
doi: 10.1038/s44172-023-00133-9
Article, Bibliographie

Abstract

Advanced nanomaterials are at the core of innovation for the microelectronics industry. Designing, characterizing, and testing two-terminal devices, such as metal-insulator-metal structures, is key to improving material stack design and integration. Electrical biasing within in situ transmission electron microscopy using MEMS-based platforms is a promising technique for nano-characterization under operando conditions. However, conventional focused ion beam sample preparation can introduce parasitic current paths, limiting device performance and leading to overestimated electrical responses. Here we demonstrate connectivity of TEM lamella devices obtained from a novel electrical contacting method based solely on van der Waals forces. This method reduces parasitic leakage currents by at least five orders of magnitude relative to reported preparation approaches. Our methodology enables operation of stack devices inside a microscope with device currents as low as 10 pA. We apply this approach to observe in situ biasing-induced defect formation, providing valuable insights into the behavior of an SrTiO3-based memristor.

Item Type: Article
Erschienen: 2023
Creators: Recalde-Benitez, Oscar ; Jiang, Tianshu ; Winkler, Robert ; Ruan, Yating ; Zintler, Alexander ; Adabifiroozjaei, Esmaeil ; Arzumanov, Alexey ; Hubbard, William A. ; Omme, Tijn van ; Pivak, Yevheniy ; Perez-Garza, Hector H. ; Regan, B.C. ; Alff, Lambert ; Komissinskiy, Philipp ; Molina-Luna, Leopoldo
Type of entry: Bibliographie
Title: Operando two-terminal devices inside a transmission electron microscope
Language: English
Date: 23 November 2023
Place of Publication: London
Publisher: Springer Nature
Journal or Publication Title: Communications Engineering
Volume of the journal: 2
Collation: 8 Seiten
DOI: 10.1038/s44172-023-00133-9
URL / URN: https://www.nature.com/articles/s44172-023-00133-9
Abstract:

Advanced nanomaterials are at the core of innovation for the microelectronics industry. Designing, characterizing, and testing two-terminal devices, such as metal-insulator-metal structures, is key to improving material stack design and integration. Electrical biasing within in situ transmission electron microscopy using MEMS-based platforms is a promising technique for nano-characterization under operando conditions. However, conventional focused ion beam sample preparation can introduce parasitic current paths, limiting device performance and leading to overestimated electrical responses. Here we demonstrate connectivity of TEM lamella devices obtained from a novel electrical contacting method based solely on van der Waals forces. This method reduces parasitic leakage currents by at least five orders of magnitude relative to reported preparation approaches. Our methodology enables operation of stack devices inside a microscope with device currents as low as 10 pA. We apply this approach to observe in situ biasing-induced defect formation, providing valuable insights into the behavior of an SrTiO3-based memristor.

Additional Information:

Artikel-ID: 83

Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 26 Jan 2024 07:57
Last Modified: 26 Jan 2024 08:06
PPN: 515063185
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