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Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K

Buschhorn, G. ; Diedrich, E. ; Kufner, W. ; Rzepka, M. ; Genz, H. ; Hoffmann-Stascheck, P. ; Richter, A. (1997)
Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K.
In: Physical review. B 55 (1997), S. 6196-6202
Article, Bibliographie

Item Type: Article
Erschienen: 1997
Creators: Buschhorn, G. ; Diedrich, E. ; Kufner, W. ; Rzepka, M. ; Genz, H. ; Hoffmann-Stascheck, P. ; Richter, A.
Type of entry: Bibliographie
Title: Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K
Language: English
Date: 1997
Journal or Publication Title: Physical review. B 55 (1997), S. 6196-6202
Additional Information:

Ersch. ebenf. als: Techn. Hochschule Darmstadt, FB 5, Inst. für Kernphysik: IKDA; 97/5

Divisions: 05 Department of Physics
Date Deposited: 19 Nov 2008 16:24
Last Modified: 20 Feb 2020 13:30
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