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Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration

Engel, Michael ; Farmer, Damon B. ; Azpiroz, Jaione Tirapu ; Seo, Jung-Woo T. ; Kang, Joohoon ; Avouris, Phaedon ; Hersam, Mark C. ; Krupke, Ralph ; Steiner, Mathias (2018)
Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration.
In: Nature Communications, 9 (1)
doi: 10.1038/s41467-018-06604-4
Article, Bibliographie

Abstract

Directed placement of solution-based nanomaterials at predefined locations with nanoscale precision limits bottom-up integration in semiconductor process technology. We report a method for electric-field-assisted placement of nanomaterials from solution by means of large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, and then are removed once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas >1 mm2. In order to demonstrate the broad applicability, we have assembled representative zero-dimensional, one-dimensional, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. Ultimately, this method opens a route to bottom-up integration of nanomaterials for industry-scale applications.

Item Type: Article
Erschienen: 2018
Creators: Engel, Michael ; Farmer, Damon B. ; Azpiroz, Jaione Tirapu ; Seo, Jung-Woo T. ; Kang, Joohoon ; Avouris, Phaedon ; Hersam, Mark C. ; Krupke, Ralph ; Steiner, Mathias
Type of entry: Bibliographie
Title: Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration
Language: English
Date: 5 October 2018
Publisher: Springer Nature
Journal or Publication Title: Nature Communications
Volume of the journal: 9
Issue Number: 1
DOI: 10.1038/s41467-018-06604-4
URL / URN: https://www.nature.com/articles/s41467-018-06604-4
Abstract:

Directed placement of solution-based nanomaterials at predefined locations with nanoscale precision limits bottom-up integration in semiconductor process technology. We report a method for electric-field-assisted placement of nanomaterials from solution by means of large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, and then are removed once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas >1 mm2. In order to demonstrate the broad applicability, we have assembled representative zero-dimensional, one-dimensional, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. Ultimately, this method opens a route to bottom-up integration of nanomaterials for industry-scale applications.

Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Fachgebiet Molekulare Nanostrukturen
Date Deposited: 20 Nov 2020 12:10
Last Modified: 20 Nov 2020 12:10
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