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Preparation of Aniline-Based Nitrogen-Containing Diamond-Like Carbon Films with Low Electrical Resistivity

Hatada, Ruriko ; Flege, Stefan ; Ensinger, Wolfgang ; Hesse, Sabine ; Tanabe, Shuji ; Nishimura, Yasuhisa ; Baba, Koumei (2020)
Preparation of Aniline-Based Nitrogen-Containing Diamond-Like Carbon Films with Low Electrical Resistivity.
In: Coatings, 10 (1)
doi: 10.3390/coatings10010054
Article, Bibliographie

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Abstract

The intrinsic high electrical resistivity of diamond-like carbon (DLC) films prevents their use in certain applications. The addition of metal or nitrogen during the preparation of the DLC films leads to a lower resistivity of the films, but it is usually accompanied by several disadvantages, such as a potential contamination risk for surfaces in contact with the film, a limited area that can be coated, deteriorated mechanical properties or low deposition rates of the films. To avoid these problems, DLC films have been prepared by plasma source ion implantation using aniline as a precursor gas, either in pure form or mixed with acetylene. The nitrogen from the precursor aniline is incorporated into the DLC films, leading to a reduced electrical resistivity. Film properties such as hardness, surface roughness and friction coefficient are nearly unchanged as compared to an additionally prepared reference sample, which was deposited using only pure acetylene as precursor gas.

Item Type: Article
Erschienen: 2020
Creators: Hatada, Ruriko ; Flege, Stefan ; Ensinger, Wolfgang ; Hesse, Sabine ; Tanabe, Shuji ; Nishimura, Yasuhisa ; Baba, Koumei
Type of entry: Bibliographie
Title: Preparation of Aniline-Based Nitrogen-Containing Diamond-Like Carbon Films with Low Electrical Resistivity
Language: English
Date: 8 January 2020
Publisher: MDPI
Journal or Publication Title: Coatings
Volume of the journal: 10
Issue Number: 1
DOI: 10.3390/coatings10010054
URL / URN: https://doi.org/10.3390/coatings10010054
Corresponding Links:
Abstract:

The intrinsic high electrical resistivity of diamond-like carbon (DLC) films prevents their use in certain applications. The addition of metal or nitrogen during the preparation of the DLC films leads to a lower resistivity of the films, but it is usually accompanied by several disadvantages, such as a potential contamination risk for surfaces in contact with the film, a limited area that can be coated, deteriorated mechanical properties or low deposition rates of the films. To avoid these problems, DLC films have been prepared by plasma source ion implantation using aniline as a precursor gas, either in pure form or mixed with acetylene. The nitrogen from the precursor aniline is incorporated into the DLC films, leading to a reduced electrical resistivity. Film properties such as hardness, surface roughness and friction coefficient are nearly unchanged as compared to an additionally prepared reference sample, which was deposited using only pure acetylene as precursor gas.

Uncontrolled Keywords: Diamond-like carbon, aniline, electrical resistivity, plasma-enhanced chemical vapor deposition, plasma source ion implantation
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science > Physics of Surfaces
Date Deposited: 14 Feb 2020 10:31
Last Modified: 29 Nov 2023 06:10
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