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Number of items: 3.

Aller, Ingo and Schweeger, and Lang, and Hartnagel, H. L. and Dolt, and Hohenberg, Günter (1996):
GaAs piezotransistor for dynamic pressure measurements at high temperatures.
In: Applied physics letters. 69 (1996), S. 403-405, [Article]

Bellone, S. and Rinaldi, and Vitale, and Cocorullo, and Schweeger, and Hartnagel, (1996):
A two-dimensional analytical model of homojunction GaAs BMFET structures.
In: Solid-state electronics. 39 (1996), S. 1221-1229, [Article]

Hjort, K. and Schweeger, and Dehé, and Fricke, and Hartnagel, (1995):
Thickness-field excited thickness-shear resonators in (110) GaAs.
In: Applied physics letters. 66 (1995), No. 3, S. 326-328, [Article]

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