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Hillmann, Stephan and Rachut, Karsten and Bayer, Thorsten J. M. and Li, Shunyi and Klein, Andreas (2015):
Application of atomic layer deposited Al2O3as charge injection layer for high-permittivity dielectrics.
In: Semiconductor Science and Technology, 30 (2), pp. 024012(1-7), ISSN 0268-1242,
[Online-Edition: http://dx.doi.org/10.1088/0268-1242/30/2/024012],
[Article]
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