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Number of items: 4.

Kazakov, I. P. and Kotelnikov, I. N. and Feiginov, Michael N. and Dizhur, S. E. and Fedorov, Yu. V. and Bugaev, A. S. and Glazyrin, E. V. (2007):
MBE-grown Al/GaAs heterostructure for tunnel spectroscopy of two-dimensional electron systems.
In: Proceedings of VIIIth Russian Conference on Physics of Semiconductors, Ekaterinburg, Russia, Oct. 2007, [Conference or Workshop Item]

Kotelnikov, I. N. and Dizhur, S. E. and Feiginov, Michael N. and Mordovets, N. A. (2006):
Influence of photon energy and the temperature on persistent tunnelling photoconductivity effect in al/delta-GaAs structures.
In: Semiconductors, pp. 839-845, 40, [Article]

Dizhur, E. M. and Voronovsky, A. N. and Kotelnikov, I. N. and Dizhur, S. E. and Feiginov, Michael N. (2003):
Experimental study of pressure influence on tunnel transport into 2DEG.
In: Physica status solidi / B, pp. 531-535, Vol. 2, [Article]

Kotelnikov, I. N. and Dizhur, E. M. and Voronovsky, A. N. and Dizhur, S. E. and Kokin, V. A. and Feiginov, Michael N. (2003):
Tunneling spectroscopy of 2DES in near-surface delta-doped GaAs at high pressure.
Singapore, World Scientific, In: International Symposium on Nanostructures: Physics and Technology <11, 2003, Sankt-Peterburg>: Special issue .../ ed. Robert A. Suris.- Singapore: World Scientific, 2003, [Conference or Workshop Item]

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