Toulemonde, M. ; Assmann, W. ; Trautmann, C. (2016)
Electronic sputtering of vitreous SiO2: Experimental and modeling results.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379
doi: 10.1016/j.nimb.2016.03.023
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The irradiation of solids with swift heavy ions leads to pronounced surface and bulk effects controlled by the electronic energy loss of the projectiles. In contrast to the formation of ion tracks in bulk materials, the concomitant emission of atoms from the surface is much less investigated. Sputtering experiments with different ions (58Ni, 127I and 197Au) at energies around 1.2 MeV/u were performed on vitreous SiO2 (a-SiO2) in order to quantify the emission rates and compare them with data for crystalline SiO2 quartz. Stoichiometry of the sputtering process was verified by monitoring the thickness decreases of a thin SiO2 film deposited on a Si substrate. Angular distributions of the emitted atoms were measured by collecting sputtered atoms on arc-shaped Cu catcher foils. Subsequent analysis of the number of Si atoms deposited on the catcher foils was quantified by elastic recoil detection analysis providing differential as well as total sputtering yields. Compared to existing data for crystalline SiO2, the total sputtering yields for vitreous SiO2 are by a factor of about five larger. Differences in the sputtering rate and track formation characteristics between amorphous and crystalline SiO2 are discussed within the frame of the inelastic thermal spike model.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2016 |
| Autor(en): | Toulemonde, M. ; Assmann, W. ; Trautmann, C. |
| Art des Eintrags: | Bibliographie |
| Titel: | Electronic sputtering of vitreous SiO2: Experimental and modeling results |
| Sprache: | Englisch |
| Publikationsjahr: | 15 Juli 2016 |
| Verlag: | Elsevier Science Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| Jahrgang/Volume einer Zeitschrift: | 379 |
| DOI: | 10.1016/j.nimb.2016.03.023 |
| URL / URN: | https://doi.org/10.1016/j.nimb.2016.03.023 |
| Kurzbeschreibung (Abstract): | The irradiation of solids with swift heavy ions leads to pronounced surface and bulk effects controlled by the electronic energy loss of the projectiles. In contrast to the formation of ion tracks in bulk materials, the concomitant emission of atoms from the surface is much less investigated. Sputtering experiments with different ions (58Ni, 127I and 197Au) at energies around 1.2 MeV/u were performed on vitreous SiO2 (a-SiO2) in order to quantify the emission rates and compare them with data for crystalline SiO2 quartz. Stoichiometry of the sputtering process was verified by monitoring the thickness decreases of a thin SiO2 film deposited on a Si substrate. Angular distributions of the emitted atoms were measured by collecting sputtered atoms on arc-shaped Cu catcher foils. Subsequent analysis of the number of Si atoms deposited on the catcher foils was quantified by elastic recoil detection analysis providing differential as well as total sputtering yields. Compared to existing data for crystalline SiO2, the total sputtering yields for vitreous SiO2 are by a factor of about five larger. Differences in the sputtering rate and track formation characteristics between amorphous and crystalline SiO2 are discussed within the frame of the inelastic thermal spike model. |
| Freie Schlagworte: | Swift heavy Ions, Sputtering, Amorphous SiO2 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Ionenstrahlmodifizierte Materialien 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 29 Dez 2017 09:25 |
| Letzte Änderung: | 29 Dez 2017 09:25 |
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