Tengeler, Sven ; Kaiser, Bernhard ; Ferro, Gabriel ; Chaussende, Didier ; Jaegermann, Wolfram (2018)
The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS.
In: Applied Surface Science, 427
doi: 10.1016/j.apsusc.2017.08.220
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The (001) surface of cubic silicon carbide (3C SiC) after cleaning, Ar sputtering and three different wet chemical etching procedures was thoroughly investigated via (angle resolved) XPS, HREELS, and LEED. While Ar sputtering was found to be unsuitable for surface preparation, all three employed wet chemical etching procedures (piranha/NH4F, piranha/HF, and RCA) provide a clean surface. HF as oxide removal agent tends to result in fluorine traces on the sample surface, despite thorough rinsing. All procedures yield a 1 × 1 Si–OH/C–H terminated surface. However, the XPS spectra reveal some differences in the resulting surface states. NH4F for oxide removal produces a flat band situation, whereas the other two procedures result in a slight downward (HF) or upward (RCA) band bending. Because the band bending is small, it can be concluded that the number of unsaturated surface defects is low.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2018 |
| Autor(en): | Tengeler, Sven ; Kaiser, Bernhard ; Ferro, Gabriel ; Chaussende, Didier ; Jaegermann, Wolfram |
| Art des Eintrags: | Bibliographie |
| Titel: | The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Januar 2018 |
| Verlag: | Elsevier Science Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Surface Science |
| Jahrgang/Volume einer Zeitschrift: | 427 |
| DOI: | 10.1016/j.apsusc.2017.08.220 |
| URL / URN: | https://doi.org/10.1016/j.apsusc.2017.08.220 |
| Kurzbeschreibung (Abstract): | The (001) surface of cubic silicon carbide (3C SiC) after cleaning, Ar sputtering and three different wet chemical etching procedures was thoroughly investigated via (angle resolved) XPS, HREELS, and LEED. While Ar sputtering was found to be unsuitable for surface preparation, all three employed wet chemical etching procedures (piranha/NH4F, piranha/HF, and RCA) provide a clean surface. HF as oxide removal agent tends to result in fluorine traces on the sample surface, despite thorough rinsing. All procedures yield a 1 × 1 Si–OH/C–H terminated surface. However, the XPS spectra reveal some differences in the resulting surface states. NH4F for oxide removal produces a flat band situation, whereas the other two procedures result in a slight downward (HF) or upward (RCA) band bending. Because the band bending is small, it can be concluded that the number of unsaturated surface defects is low. |
| Freie Schlagworte: | 3C-SiC, XPS, LEED, HREELS, Band diagram, Wet chemical etching, Work function, interface |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 27 Sep 2017 08:14 |
| Letzte Änderung: | 26 Jun 2018 11:06 |
| PPN: | |
| Sponsoren: | We are grateful for the financial support by the DFG in the framework of the Excellence Initiative, Darmstadt Graduate School of Excellence Energy Science and Engineering (GSC 1070). |
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