Tengeler, Sven ; Kaiser, Bernhard ; Chaussende, Didier ; Jaegermann, Wolfram (2017)
(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes.
In: Applied Surface Science, 400
doi: 10.1016/j.apsusc.2016.12.136
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2017 |
| Autor(en): | Tengeler, Sven ; Kaiser, Bernhard ; Chaussende, Didier ; Jaegermann, Wolfram |
| Art des Eintrags: | Bibliographie |
| Titel: | (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes |
| Sprache: | Englisch |
| Publikationsjahr: | 1 April 2017 |
| Verlag: | Elsevier Science Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Surface Science |
| Jahrgang/Volume einer Zeitschrift: | 400 |
| DOI: | 10.1016/j.apsusc.2016.12.136 |
| URL / URN: | https://doi.org/10.1016/j.apsusc.2016.12.136 |
| Kurzbeschreibung (Abstract): | The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts. |
| Freie Schlagworte: | 3C-SiC, Nickel, Interface experiment, XPS, Barrier height, Band diagram |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 27 Sep 2017 08:12 |
| Letzte Änderung: | 26 Jun 2018 12:10 |
| PPN: | |
| Sponsoren: | We are grateful for the financial support by the DFG in the framework of the Excellence Initiative, Darmstadt Graduate School of Excellence Energy Science and Engineering (GSC 1070). |
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