TU Darmstadt / ULB / TUbiblio

Modification of diamond-like carbon films by nitrogen incorporation via plasma immersion ion implantation

Flege, Stefan and Hatada, Ruriko and Höfling, Marion and Hanauer, A. and Abel, A. and Baba, Koumei and Ensinger, Wolfgang (2015):
Modification of diamond-like carbon films by nitrogen incorporation via plasma immersion ion implantation.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, pp. 357-361, 365, Part A, ISSN 0168-583X,
[Online-Edition: http://www.sciencedirect.com/science/article/pii/S0168583X15...],
[Article]

Abstract

The addition of nitrogen to diamond-like carbon films affects properties such as the inner stress of the film, the conductivity, biocompatibility and wettability. The nitrogen content is limited, though, and the maximum concentration depends on the preparation method. Here, plasma immersion ion implantation was used for the deposition of the films, without the use of a separate plasma source, i.e. the plasma was generated by a high voltage applied to the samples. The plasma gas consisted of a mixture of C2H4 and N2, the substrates were silicon and glass. By changing the experimental parameters (high voltage, pulse length and repetition rate and gas flow ratio) layers with different N content were prepared. Additionally, some samples were prepared using a DC voltage. The nitrogen content and bonding was investigated with SIMS, AES, XPS, FTIR and Raman spectroscopy. Their influence on the electrical resistivity of the films was investigated. Depending on the preparation conditions different nitrogen contents were realized with maximum contents around 11 at.%. Those values were compared with the nitrogen concentration that can be achieved by implantation of nitrogen into a DLC film.

Item Type: Article
Erschienen: 2015
Creators: Flege, Stefan and Hatada, Ruriko and Höfling, Marion and Hanauer, A. and Abel, A. and Baba, Koumei and Ensinger, Wolfgang
Title: Modification of diamond-like carbon films by nitrogen incorporation via plasma immersion ion implantation
Language: English
Abstract:

The addition of nitrogen to diamond-like carbon films affects properties such as the inner stress of the film, the conductivity, biocompatibility and wettability. The nitrogen content is limited, though, and the maximum concentration depends on the preparation method. Here, plasma immersion ion implantation was used for the deposition of the films, without the use of a separate plasma source, i.e. the plasma was generated by a high voltage applied to the samples. The plasma gas consisted of a mixture of C2H4 and N2, the substrates were silicon and glass. By changing the experimental parameters (high voltage, pulse length and repetition rate and gas flow ratio) layers with different N content were prepared. Additionally, some samples were prepared using a DC voltage. The nitrogen content and bonding was investigated with SIMS, AES, XPS, FTIR and Raman spectroscopy. Their influence on the electrical resistivity of the films was investigated. Depending on the preparation conditions different nitrogen contents were realized with maximum contents around 11 at.%. Those values were compared with the nitrogen concentration that can be achieved by implantation of nitrogen into a DLC film.

Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Series Name: Proceedings of the 19th International Conference on Ion Beam Modification of Materials (IBMM 2014)
Volume: 365, Part A
Uncontrolled Keywords: Diamond-like carbon, Nitrogen, plasma immersion ion implantation
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Material Analytics
Date Deposited: 01 Dec 2015 08:38
Official URL: http://www.sciencedirect.com/science/article/pii/S0168583X15...
Export:

Optionen (nur für Redakteure)

View Item View Item