Hillmann, Stephan ; Rachut, Karsten ; Bayer, Thorsten J. M. ; Li, Shunyi ; Klein, Andreas (2015)
Application of atomic layer deposited Al2O3as charge injection layer for high-permittivity dielectrics.
In: Semiconductor Science and Technology, 30 (2)
doi: 10.1088/0268-1242/30/2/024012
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The current transport through (Ba,Sr)TiO3 (BST)/Al2O3 bilayer structures with Pt electrodes is studied using current–voltage measurements. Due to its low permittivity compared to BST the Al2O3 layer, which is deposited by atomic layer deposition (ALD), enables electron injection by tunneling at low thickness, such that transport becomes limited by the bulk conductivity of BST. A current rectification of up to 106 is observed at an Al2O3 thickness of 1.8 nm, indicating that hole transport does not contribute to the current. The measurements are complemented by the determination of the energy band alignment at the interface using photoelectron spectroscopy. A Fermi level pinning in the Al2O3 layer, which seems to be characteristic for ALD films, leads to a significant modification of the energy band alignment. This pinning does not prohibit electron injection, which relies on the potential drop across the Al2O3 layer.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2015 |
| Autor(en): | Hillmann, Stephan ; Rachut, Karsten ; Bayer, Thorsten J. M. ; Li, Shunyi ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Application of atomic layer deposited Al2O3as charge injection layer for high-permittivity dielectrics |
| Sprache: | Englisch |
| Publikationsjahr: | Februar 2015 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Semiconductor Science and Technology |
| Jahrgang/Volume einer Zeitschrift: | 30 |
| (Heft-)Nummer: | 2 |
| DOI: | 10.1088/0268-1242/30/2/024012 |
| Kurzbeschreibung (Abstract): | The current transport through (Ba,Sr)TiO3 (BST)/Al2O3 bilayer structures with Pt electrodes is studied using current–voltage measurements. Due to its low permittivity compared to BST the Al2O3 layer, which is deposited by atomic layer deposition (ALD), enables electron injection by tunneling at low thickness, such that transport becomes limited by the bulk conductivity of BST. A current rectification of up to 106 is observed at an Al2O3 thickness of 1.8 nm, indicating that hole transport does not contribute to the current. The measurements are complemented by the determination of the energy band alignment at the interface using photoelectron spectroscopy. A Fermi level pinning in the Al2O3 layer, which seems to be characteristic for ALD films, leads to a significant modification of the energy band alignment. This pinning does not prohibit electron injection, which relies on the potential drop across the Al2O3 layer. |
| Freie Schlagworte: | (Ba,Sr)TiO3, charge transport, Al2O3, band alignment |
| Zusätzliche Informationen: | SFB 595 D3 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung DFG-Sonderforschungsbereiche (inkl. Transregio) DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden |
| Hinterlegungsdatum: | 16 Feb 2015 15:52 |
| Letzte Änderung: | 13 Jul 2018 10:24 |
| PPN: | |
| Sponsoren: | This work was supported by the German Science Foundation (DFG) within the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials) and by the, research training school GRK 1037 (Tunable Integrated Components for Microwaves and Optics: TICMO). |
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