Tarnawski, Z. ; Zakrzewska, K. ; Kim-Ngan, N.-T. H. ; Krupska, M. ; Sowa, S. ; Drogowska, K. ; Havela, L. ; Balogh, A. G. (2015)
Hydrogen storage in Ti, V and their oxides-based thin films.
In: Advances in Natural Sciences: Nanoscience and Nanotechnology, 6 (1)
doi: 10.1088/2043-6262/6/1/013002
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
We have investigated the hydrogen storage ability and the effect of hydrogenation on structure and physical properties of Ti/V and their oxides-based thin films. A series of Ti-TiO2 and VO-TiO2 thin films with different layer structures, geometries and thicknesses have been prepared by the sputtering technique on different (Si(111), SiO2, C) substrates. For the Ti-TiO2-Ti films up to 50 at.% of hydrogen can be stored in the Ti layers, while the hydrogen can penetrate without accumulation through the TiO2 layer. A large hydrogen storage was also found in some V2O5-TiO2 films. Hydrogen could also remove the preferential orientation in the Ti films and induce a transition of V2O5 to VO2 in the films.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2015 |
| Autor(en): | Tarnawski, Z. ; Zakrzewska, K. ; Kim-Ngan, N.-T. H. ; Krupska, M. ; Sowa, S. ; Drogowska, K. ; Havela, L. ; Balogh, A. G. |
| Art des Eintrags: | Bibliographie |
| Titel: | Hydrogen storage in Ti, V and their oxides-based thin films |
| Sprache: | Englisch |
| Publikationsjahr: | März 2015 |
| Verlag: | IOP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Advances in Natural Sciences: Nanoscience and Nanotechnology |
| Jahrgang/Volume einer Zeitschrift: | 6 |
| (Heft-)Nummer: | 1 |
| DOI: | 10.1088/2043-6262/6/1/013002 |
| URL / URN: | http://iopscience.iop.org/2043-6262/6/1/013002 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | We have investigated the hydrogen storage ability and the effect of hydrogenation on structure and physical properties of Ti/V and their oxides-based thin films. A series of Ti-TiO2 and VO-TiO2 thin films with different layer structures, geometries and thicknesses have been prepared by the sputtering technique on different (Si(111), SiO2, C) substrates. For the Ti-TiO2-Ti films up to 50 at.% of hydrogen can be stored in the Ti layers, while the hydrogen can penetrate without accumulation through the TiO2 layer. A large hydrogen storage was also found in some V2O5-TiO2 films. Hydrogen could also remove the preferential orientation in the Ti films and induce a transition of V2O5 to VO2 in the films. |
| Zusätzliche Informationen: | Invited talk at the 7th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN2014, 2-6 November, 2014, Ha Long, Vietnam. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik |
| Hinterlegungsdatum: | 27 Jan 2015 14:01 |
| Letzte Änderung: | 20 Mär 2024 09:39 |
| PPN: | |
| Sponsoren: | We acknowledge the support of the Czech-Polish cooperation by the Czech Ministry of Education (Czech-polish project 7AMB14PL036 (9004/R14/R15)., N-THKN acknowledged the fi nancial support by the European Regional Development Fund under the Infrastructure and Environment Programme. |
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Hydrogen storage in Ti, V and their oxides-based thin films. (deposited 19 Mär 2024 10:10)
- Hydrogen storage in Ti, V and their oxides-based thin films. (deposited 27 Jan 2015 14:01) [Gegenwärtig angezeigt]
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