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Algorithms and Models for Simulation of MOCVD of III-V Layers in the Planetary Reactor

Bergunde, T. and Dauelsberg, M. and Egorov, Yu and Kadinski, L. and Makarov, Yu N. and Schäfer, M. and Strauch, G. and Weyers, M. (1995):
Algorithms and Models for Simulation of MOCVD of III-V Layers in the Planetary Reactor.
In: Simulation of Semiconductor Devices and Processes, Springer, pp. 328-331, 6, [Article]

Item Type: Article
Erschienen: 1995
Creators: Bergunde, T. and Dauelsberg, M. and Egorov, Yu and Kadinski, L. and Makarov, Yu N. and Schäfer, M. and Strauch, G. and Weyers, M.
Title: Algorithms and Models for Simulation of MOCVD of III-V Layers in the Planetary Reactor
Language: German
Journal or Publication Title: Simulation of Semiconductor Devices and Processes
Title of Book: Simulation of Semiconductor Devices and Processes
Volume: 6
Publisher: Springer
Divisions: 16 Department of Mechanical Engineering > Institute of Numerical Methods in Mechanical Engineering (FNB)
16 Department of Mechanical Engineering
Date Deposited: 24 Mar 2014 14:26
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