Hildebrandt, Erwin ; Kurian, Jose ; Alff, Lambert (2012)
Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO[sub 2±x].
In: Journal of Applied Physics, 112 (11)
doi: 10.1063/1.4767379
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO2±x grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (1¯11) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Hildebrandt, Erwin ; Kurian, Jose ; Alff, Lambert |
| Art des Eintrags: | Bibliographie |
| Titel: | Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO[sub 2±x] |
| Sprache: | Englisch |
| Publikationsjahr: | 6 Dezember 2012 |
| Verlag: | AIP Publishing LLC |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 112 |
| (Heft-)Nummer: | 11 |
| DOI: | 10.1063/1.4767379 |
| Kurzbeschreibung (Abstract): | We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO2±x grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (1¯11) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior. |
| Freie Schlagworte: | defect states, dielectric thin films, electrical conductivity, electrical resistivity, energy gap, epitaxial layers, hafnium compounds, molecular beam epitaxial growth, oxidation, texture, vacancies (crystal) |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 07 Jan 2014 10:21 |
| Letzte Änderung: | 19 Sep 2014 07:52 |
| PPN: | |
| Sponsoren: | This work was supported by DFG through Grant No. AL 560/13-1 and the LOEWE-Centre AdRIA |
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