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Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide

Deuermeier, Jonas and Gassmann, Jürgen and Broetz, Joachim and Klein, Andreas (2011):
Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide.
In: Journal of Applied Physics, p. 113704, 109, (11), ISSN 00218979, [Online-Edition: http://dx.doi.org/10.1063/1.3592981],
[Article]

Abstract

Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu2O) are identified. In addition, the interface formation between Cu2O and Sn-doped In2O3 (ITO) was studied by stepwise deposition of Cu2O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset ΔEVB = 2.1–2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu2O/n-ITO junctions, which have been investigated for thin film solar cells.

Item Type: Article
Erschienen: 2011
Creators: Deuermeier, Jonas and Gassmann, Jürgen and Broetz, Joachim and Klein, Andreas
Title: Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide
Language: English
Abstract:

Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu2O) are identified. In addition, the interface formation between Cu2O and Sn-doped In2O3 (ITO) was studied by stepwise deposition of Cu2O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset ΔEVB = 2.1–2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu2O/n-ITO junctions, which have been investigated for thin film solar cells.

Journal or Publication Title: Journal of Applied Physics
Volume: 109
Number: 11
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
11 Department of Materials and Earth Sciences > Material Science > Structure Research
DFG-Collaborative Research Centres (incl. Transregio)
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
Date Deposited: 17 Sep 2012 13:03
Official URL: http://dx.doi.org/10.1063/1.3592981
Additional Information:

SFB 595 D3

Identification Number: doi:10.1063/1.3592981
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