Deuermeier, Jonas and Gassmann, Jürgen and Broetz, Joachim and Klein, Andreas (2011):
Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide.
In: Journal of Applied Physics, 109 (11), p. 113704, ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.3592981],
[Article]
Abstract
Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu2O) are identified. In addition, the interface formation between Cu2O and Sn-doped In2O3 (ITO) was studied by stepwise deposition of Cu2O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset ΔEVB = 2.1–2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu2O/n-ITO junctions, which have been investigated for thin film solar cells.
| Item Type: | Article |
|---|---|
| Erschienen: | 2011 |
| Creators: | Deuermeier, Jonas and Gassmann, Jürgen and Broetz, Joachim and Klein, Andreas |
| Title: | Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide |
| Language: | English |
| Abstract: | Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu2O) are identified. In addition, the interface formation between Cu2O and Sn-doped In2O3 (ITO) was studied by stepwise deposition of Cu2O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset ΔEVB = 2.1–2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu2O/n-ITO junctions, which have been investigated for thin film solar cells. |
| Journal or Publication Title: | Journal of Applied Physics |
| Volume: | 109 |
| Number: | 11 |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Surface Science 11 Department of Materials and Earth Sciences > Material Science > Structure Research DFG-Collaborative Research Centres (incl. Transregio) DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres Zentrale Einrichtungen DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes |
| Date Deposited: | 17 Sep 2012 13:03 |
| Official URL: | http://dx.doi.org/10.1063/1.3592981 |
| Additional Information: | SFB 595 D3 |
| Identification Number: | doi:10.1063/1.3592981 |
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