Engel, Michael ; Steiner, Mathias ; Sundaram, Ravi S. ; Krupke, Ralph ; Green, Alexander A. ; Hersam, Mark C. ; Avouris, Phaedon (2012)
Spatially Resolved Electrostatic Potential and Photocurrent Generation in Carbon Nanotube Array Devices.
In: ACS Nano
doi: 10.1021/nn302416e
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We have used laser-excited photocurrent microscopy to map the internal electrostatic potential profile of semiconducting single-walled carbon nanotube (S-SWCNT) array devices with a spatial resolution of 250 nm. The measurements of S-SWCNTs on optically transparent samples provide new insights into the physical principles of device operation and reveal performance-limiting local heterogeneities in the electrostatic potential profile not observable with other imaging techniques. The experiments deliver photocurrent images from the underside of the S-SWCNT–metal contacts and thus enable the direct measurement of the charge carrier transfer lengths at the palladium–S-SWCNT and aluminum–S-SWCNT interfaces. We use the experimental results to formulate design rules for optimized layouts of S-SWCNT-based photovoltaic devices. Furthermore, we demonstrate the external control of the electrostatic potential profile in S-SWCNT array devices equipped with local metal gates.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Engel, Michael ; Steiner, Mathias ; Sundaram, Ravi S. ; Krupke, Ralph ; Green, Alexander A. ; Hersam, Mark C. ; Avouris, Phaedon |
| Art des Eintrags: | Bibliographie |
| Titel: | Spatially Resolved Electrostatic Potential and Photocurrent Generation in Carbon Nanotube Array Devices |
| Sprache: | Englisch |
| Publikationsjahr: | 7 Juli 2012 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | ACS Nano |
| DOI: | 10.1021/nn302416e |
| Kurzbeschreibung (Abstract): | We have used laser-excited photocurrent microscopy to map the internal electrostatic potential profile of semiconducting single-walled carbon nanotube (S-SWCNT) array devices with a spatial resolution of 250 nm. The measurements of S-SWCNTs on optically transparent samples provide new insights into the physical principles of device operation and reveal performance-limiting local heterogeneities in the electrostatic potential profile not observable with other imaging techniques. The experiments deliver photocurrent images from the underside of the S-SWCNT–metal contacts and thus enable the direct measurement of the charge carrier transfer lengths at the palladium–S-SWCNT and aluminum–S-SWCNT interfaces. We use the experimental results to formulate design rules for optimized layouts of S-SWCNT-based photovoltaic devices. Furthermore, we demonstrate the external control of the electrostatic potential profile in S-SWCNT array devices equipped with local metal gates. |
| Freie Schlagworte: | nanoelectronics; nano-optics; self-assembly |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Molekulare Nanostrukturen 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 16 Aug 2012 07:01 |
| Letzte Änderung: | 05 Mär 2013 10:02 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum