Krockenberger, Y. ; Kurian, J. ; Naitoh, M. ; Alff, L. (2008)
Epitaxial growth of Gd2-xCexCuO4 thin films.
In: Journal of Physics: Conference Series, 108
doi: 10.1088/1742-6596/108/1/012041
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We have grown (001)-oriented thin films of Gd2-xCexCuO4with cerium composition 0 < x < 0.2 by state-of-the-art reactive molecular beam epitaxy and characterized them by x-ray diffraction and transport measurements. A systematical change in the c-axis length upon cerium doping indicates that single-phase films were obtained for the whole doping range. Based on a log po2 - 1/T phase diagram in combination with reflection high energy electron diffraction (RHEED), phase stability has been determined in order to achieve optimized reduction conditions. Gd2-xCexCuO4 thin films even after controlled reductions treatment did not show superconductivity in the whole range of Ce concentration studied. However, the room temperature resistivity of optimally reduced Gd2-xCexCuO4 thin films shows a minimum at around xCe = 0.16. Our results on the growth and characterization of Gd2-xCexCuO4 thin films on (100) SrTiO3 substrates are described in detail.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2008 |
Autor(en): | Krockenberger, Y. ; Kurian, J. ; Naitoh, M. ; Alff, L. |
Art des Eintrags: | Bibliographie |
Titel: | Epitaxial growth of Gd2-xCexCuO4 thin films |
Sprache: | Englisch |
Publikationsjahr: | 2008 |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Physics: Conference Series |
Jahrgang/Volume einer Zeitschrift: | 108 |
DOI: | 10.1088/1742-6596/108/1/012041 |
Kurzbeschreibung (Abstract): | We have grown (001)-oriented thin films of Gd2-xCexCuO4with cerium composition 0 < x < 0.2 by state-of-the-art reactive molecular beam epitaxy and characterized them by x-ray diffraction and transport measurements. A systematical change in the c-axis length upon cerium doping indicates that single-phase films were obtained for the whole doping range. Based on a log po2 - 1/T phase diagram in combination with reflection high energy electron diffraction (RHEED), phase stability has been determined in order to achieve optimized reduction conditions. Gd2-xCexCuO4 thin films even after controlled reductions treatment did not show superconductivity in the whole range of Ce concentration studied. However, the room temperature resistivity of optimally reduced Gd2-xCexCuO4 thin films shows a minimum at around xCe = 0.16. Our results on the growth and characterization of Gd2-xCexCuO4 thin films on (100) SrTiO3 substrates are described in detail. |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
Hinterlegungsdatum: | 29 Mär 2012 11:19 |
Letzte Änderung: | 25 Apr 2016 07:52 |
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