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Model for the Decrease in HBT Collector Current under DC Stress based on Recombination Enhanced Defect Reactions

Schuessler, M. ; Mottet, B. ; Sydlo, C. ; Krozer, V. ; Hartnagel, H. L. ; Jakoby, Rolf (2000):
Model for the Decrease in HBT Collector Current under DC Stress based on Recombination Enhanced Defect Reactions.
Dresden, Germany, 11th ESREF-Symposium, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2000
Creators: Schuessler, M. ; Mottet, B. ; Sydlo, C. ; Krozer, V. ; Hartnagel, H. L. ; Jakoby, Rolf
Title: Model for the Decrease in HBT Collector Current under DC Stress based on Recombination Enhanced Defect Reactions
Language: English
Place of Publication: Dresden, Germany
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: 11th ESREF-Symposium
Date Deposited: 27 Jan 2012 15:18
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