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Model for the Decrease in HBT Collector Current under DC Stress based on Recombination Enhanced Defect Reactions

Schüßler, M. and Mottet, B. and Sydlo, C. and Krozer, V. and Hartnagel, H. L. and Jakoby, Rolf (2000):
Model for the Decrease in HBT Collector Current under DC Stress based on Recombination Enhanced Defect Reactions.
Dresden, Germany, In: 11th ESREF-Symposium, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2000
Creators: Schüßler, M. and Mottet, B. and Sydlo, C. and Krozer, V. and Hartnagel, H. L. and Jakoby, Rolf
Title: Model for the Decrease in HBT Collector Current under DC Stress based on Recombination Enhanced Defect Reactions
Language: English
Place of Publication: Dresden, Germany
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: 11th ESREF-Symposium
Date Deposited: 27 Jan 2012 15:18
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