Kim-Ngan, N.-T. H. ; Balogh, A. G. ; Havela, L. ; Gouder, T. (2010)
Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 268 (11-12)
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The films were prepared by reactive DC sputtering at the temperatures of −200 °C, +25 °C and +300 °C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at −200 °C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1 MeV Ar+ ion beam with ion fluence of about 1.2–1.7 × 1016 ions/cm2 caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at −200 °C and at +25 °C, but almost no change in the film thickness was detected for the film deposited at +300 °C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 × 1016 ions/cm2.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2010 |
| Autor(en): | Kim-Ngan, N.-T. H. ; Balogh, A. G. ; Havela, L. ; Gouder, T. |
| Art des Eintrags: | Bibliographie |
| Titel: | Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy |
| Sprache: | Englisch |
| Publikationsjahr: | Juni 2010 |
| Verlag: | Elsevier Science Publishing Company |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| Jahrgang/Volume einer Zeitschrift: | 268 |
| (Heft-)Nummer: | 11-12 |
| URL / URN: | http://www.sciencedirect.com/science/article/B6TJN-4YG7JPT-G... |
| Kurzbeschreibung (Abstract): | Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The films were prepared by reactive DC sputtering at the temperatures of −200 °C, +25 °C and +300 °C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at −200 °C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1 MeV Ar+ ion beam with ion fluence of about 1.2–1.7 × 1016 ions/cm2 caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at −200 °C and at +25 °C, but almost no change in the film thickness was detected for the film deposited at +300 °C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 × 1016 ions/cm2. |
| Freie Schlagworte: | Uranium nitride films; RBS; Sputtering; Ion beam mixing |
| Zusätzliche Informationen: | 19th International Conference on Ion Beam Analysis |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 09 Jul 2010 10:41 |
| Letzte Änderung: | 05 Mär 2013 09:35 |
| PPN: | |
| Sponsoren: | The financial support from German Academic Exchange Service (DAAD) – D/08/07729 project (between Germany and Poland) is highly acknowledged., A.G.B. acknowledges the financial support by German Research Foundation (DFG) – SFB-595 project., L.H. acknowledges the financial support by the Czech Research PlanMSM 0021620834 and the Grant No. IAA100100912. |
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