Behtash, R. ; Tobler, H. ; Berlec, F.-J. ; Ziegler, V. ; Leier, H. ; Adelseck, B. ; Martin, T. ; Balmer, R. S. ; Pavlidis, Dimitris ; Jansen, R. H. ; Neuburger, M. ; Schumacher, H. (2004)
Coplanar AlGaN/GaN HEMT power amplifier MMIC at x-band.
2004 IEEE MTT-S International Microwave Symposium digest. Fort Worth, Texas, USA (06.06.2004-11.06.2004)
doi: 10.1109/MWSYM.2004.1338904
Konferenzveröffentlichung, Bibliographie
Kurzbeschreibung (Abstract)
A power amplifier MMIC based on AlGaN/GaN HEMTs was fabricated and measured. The coplanar balanced amplifier consists of two 8/spl times/100/spl mu/m transistors. Wilkinson splitters were used to divide and combine the power. BY biasing the amplifier at V/sub DS/=30V a maximum CW output power of 39dBm corresponding to 5W/mm with a maximum power added efficiency (PAE) of 33.8% was achieved at 10GHz. Biasing the amplifier at V/sub DS/=20V resulted in 36.7% PAE with 37.2dBm CW output power at 10GHz. To the author's knowledge these results represent the highest output power density so far achieved for GaN-based MMICs at X-band in CW mode.
| Typ des Eintrags: | Konferenzveröffentlichung |
|---|---|
| Erschienen: | 2004 |
| Autor(en): | Behtash, R. ; Tobler, H. ; Berlec, F.-J. ; Ziegler, V. ; Leier, H. ; Adelseck, B. ; Martin, T. ; Balmer, R. S. ; Pavlidis, Dimitris ; Jansen, R. H. ; Neuburger, M. ; Schumacher, H. |
| Art des Eintrags: | Bibliographie |
| Titel: | Coplanar AlGaN/GaN HEMT power amplifier MMIC at x-band |
| Sprache: | Englisch |
| Publikationsjahr: | 2004 |
| Ort: | Piscataway |
| Verlag: | IEEE Service Center |
| Buchtitel: | 2004 IEEE MTT-S International Microwave Symposium digest; Vol. 3 |
| Veranstaltungstitel: | 2004 IEEE MTT-S International Microwave Symposium digest |
| Veranstaltungsort: | Fort Worth, Texas, USA |
| Veranstaltungsdatum: | 06.06.2004-11.06.2004 |
| DOI: | 10.1109/MWSYM.2004.1338904 |
| Kurzbeschreibung (Abstract): | A power amplifier MMIC based on AlGaN/GaN HEMTs was fabricated and measured. The coplanar balanced amplifier consists of two 8/spl times/100/spl mu/m transistors. Wilkinson splitters were used to divide and combine the power. BY biasing the amplifier at V/sub DS/=30V a maximum CW output power of 39dBm corresponding to 5W/mm with a maximum power added efficiency (PAE) of 33.8% was achieved at 10GHz. Biasing the amplifier at V/sub DS/=20V resulted in 36.7% PAE with 37.2dBm CW output power at 10GHz. To the author's knowledge these results represent the highest output power density so far achieved for GaN-based MMICs at X-band in CW mode. |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik |
| Hinterlegungsdatum: | 20 Nov 2008 08:21 |
| Letzte Änderung: | 20 Dez 2024 08:06 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum