TU Darmstadt / ULB / TUbiblio

Improvements of the SiC homoepitaxy process in a horizont cold-wall CVD reactor

Wischmeyer, Frank and Niemann, E. and Hartnagel, H. L. (1999):
Improvements of the SiC homoepitaxy process in a horizont cold-wall CVD reactor.
28, In: Journal of electronic materials, pp. 173-177, [Article]

Item Type: Article
Erschienen: 1999
Creators: Wischmeyer, Frank and Niemann, E. and Hartnagel, H. L.
Title: Improvements of the SiC homoepitaxy process in a horizont cold-wall CVD reactor
Language: English
Journal or Publication Title: Journal of electronic materials
Volume: 28
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:26
License: [undefiniert]
Export:
Suche nach Titel in: TUfind oder in Google
Send an inquiry Send an inquiry

Options (only for editors)

View Item View Item