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Model for the decrease in HBT collector current under DC stress based on recombination enhanced defect reactions

Schuessler, M. ; Mottet, B. ; Sydlo, C. ; Krozer, V. ; Hartnagel, H. L. ; Jakoby, Rolf (2000):
Model for the decrease in HBT collector current under DC stress based on recombination enhanced defect reactions.
In: ESREF 2000: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis <11, 2000, Dresden>: Proceedings. S. 1733-1738. - Oxford: Pergamon, 2000, Oxford, Pergamon, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2000
Creators: Schuessler, M. ; Mottet, B. ; Sydlo, C. ; Krozer, V. ; Hartnagel, H. L. ; Jakoby, Rolf
Title: Model for the decrease in HBT collector current under DC stress based on recombination enhanced defect reactions
Language: English
Series Name: ESREF 2000: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis <11, 2000, Dresden>: Proceedings. S. 1733-1738. - Oxford: Pergamon, 2000
Place of Publication: Oxford
Publisher: Pergamon
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Date Deposited: 19 Nov 2008 16:25
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