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Model for the decrease in HBT collector current under DC stress based on recombination enhanced defect reactions

Schüßler, Martin and Mottet, B. and Sydlo, C. and Krozer, V. and Hartnagel, H. L. and Jakoby, Rolf (2000):
Model for the decrease in HBT collector current under DC stress based on recombination enhanced defect reactions.
Oxford, Pergamon, In: ESREF 2000: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis <11, 2000, Dresden>: Proceedings. S. 1733-1738. - Oxford: Pergamon, 2000, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2000
Creators: Schüßler, Martin and Mottet, B. and Sydlo, C. and Krozer, V. and Hartnagel, H. L. and Jakoby, Rolf
Title: Model for the decrease in HBT collector current under DC stress based on recombination enhanced defect reactions
Language: English
Series Name: ESREF 2000: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis <11, 2000, Dresden>: Proceedings. S. 1733-1738. - Oxford: Pergamon, 2000
Place of Publication: Oxford
Publisher: Pergamon
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Date Deposited: 19 Nov 2008 16:25
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