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Contact spacing controls the on-current for all-carbon field effect transistors

Özdemir, Ali Deniz ; Barua, Pramit ; Pyatkov, Felix ; Hennrich, Frank ; Chen, Yuan ; Wenzel, Wolfgang ; Krupke, Ralph ; Fediai, Artem (2021)
Contact spacing controls the on-current for all-carbon field effect transistors.
In: Communications Physics, 4 (1)
doi: 10.1038/s42005-021-00747-5
Artikel, Bibliographie

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Kurzbeschreibung (Abstract)

All-carbon field-effect transistors, which combine carbon nanotubes and graphene hold great promise for many applications such as digital logic devices and single-photon emitters. However, the understanding of the physical properties of carbon nanotube (CNT)/graphene hybrid systems in such devices remained limited. In this combined experimental and theoretical study, we use a quantum transport model for field-effect transistors based on graphene electrodes and CNT channels to explain the experimentally observed low on currents. We find that large graphene/CNT spacing and short contact lengths limit the device performance. We have also elucidated in this work the experimentally observed ambipolar transport behavior caused by the flat conduction- and valence-bands and describe non-ideal gate-control of the contacts and channel region by the quantum capacitance of graphene and the carbon nanotube. We hope that our insights will accelerate the design of efficient all-carbon field-effect transistors.

Typ des Eintrags: Artikel
Erschienen: 2021
Autor(en): Özdemir, Ali Deniz ; Barua, Pramit ; Pyatkov, Felix ; Hennrich, Frank ; Chen, Yuan ; Wenzel, Wolfgang ; Krupke, Ralph ; Fediai, Artem
Art des Eintrags: Bibliographie
Titel: Contact spacing controls the on-current for all-carbon field effect transistors
Sprache: Englisch
Publikationsjahr: 18 November 2021
Ort: London
Verlag: Springer Nature
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Communications Physics
Jahrgang/Volume einer Zeitschrift: 4
(Heft-)Nummer: 1
Kollation: 12 Seiten
DOI: 10.1038/s42005-021-00747-5
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Kurzbeschreibung (Abstract):

All-carbon field-effect transistors, which combine carbon nanotubes and graphene hold great promise for many applications such as digital logic devices and single-photon emitters. However, the understanding of the physical properties of carbon nanotube (CNT)/graphene hybrid systems in such devices remained limited. In this combined experimental and theoretical study, we use a quantum transport model for field-effect transistors based on graphene electrodes and CNT channels to explain the experimentally observed low on currents. We find that large graphene/CNT spacing and short contact lengths limit the device performance. We have also elucidated in this work the experimentally observed ambipolar transport behavior caused by the flat conduction- and valence-bands and describe non-ideal gate-control of the contacts and channel region by the quantum capacitance of graphene and the carbon nanotube. We hope that our insights will accelerate the design of efficient all-carbon field-effect transistors.

Freie Schlagworte: Electronic devices, Electronic properties and materials
ID-Nummer: Artikel-ID: 246
Sachgruppe der Dewey Dezimalklassifikatin (DDC): 500 Naturwissenschaften und Mathematik > 530 Physik
600 Technik, Medizin, angewandte Wissenschaften > 660 Technische Chemie
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Molekulare Nanostrukturen
Hinterlegungsdatum: 26 Sep 2024 07:24
Letzte Änderung: 26 Sep 2024 07:24
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