Yadav, Rahul ; Ludwig, Florian ; Faridi, Fahd Rushd ; Klopf, J. Michael ; Roskos, Hartmut G. ; Preu, Sascha ; Penirschke, Andreas (2023)
State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz.
In: Sensors, 23 (7)
doi: 10.3390/s23073469
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
We present the characterization of a Zero-bias Schottky diode-based Terahertz (THz) detector up to 5.56 THz. The detector was operated with both a table-top system until 1.2 THz and at a Free-Electron Laser (FEL) facility at singular frequencies from 1.9 to 5.56 THz. We used two measurement techniques in order to discriminate the sub-ns-scale (via a 20 GHz oscilloscope) and the ms-scale (using the lock-in technique) responsivity. While the lock-in measurements basically contain all rectification effects, the sub-ns-scale detection with the oscilloscope is not sensitive to slow bolometric effects caused by changes of the IV characteristic due to temperature. The noise equivalent power (NEP) is 10 pW/Hz in the frequency range from 0.2 to 0.6 THz and 17 pW/Hz at 1.2 THz and increases to 0.9 μW/Hz at 5.56 THz, which is at the state of the art for room temperature zero-bias Schottky diode-based THz detectors with non-resonant antennas. The voltage and current responsivity of ∼500 kV/W and ∼100 mA/W, respectively, is demonstrated over a frequency range of 0.2 to 1.2 THz with the table-top system.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2023 |
| Autor(en): | Yadav, Rahul ; Ludwig, Florian ; Faridi, Fahd Rushd ; Klopf, J. Michael ; Roskos, Hartmut G. ; Preu, Sascha ; Penirschke, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz |
| Sprache: | Englisch |
| Publikationsjahr: | 2023 |
| Ort: | Darmstadt |
| Verlag: | MDPI |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Sensors |
| Jahrgang/Volume einer Zeitschrift: | 23 |
| (Heft-)Nummer: | 7 |
| Kollation: | 12 Seiten |
| DOI: | 10.3390/s23073469 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | We present the characterization of a Zero-bias Schottky diode-based Terahertz (THz) detector up to 5.56 THz. The detector was operated with both a table-top system until 1.2 THz and at a Free-Electron Laser (FEL) facility at singular frequencies from 1.9 to 5.56 THz. We used two measurement techniques in order to discriminate the sub-ns-scale (via a 20 GHz oscilloscope) and the ms-scale (using the lock-in technique) responsivity. While the lock-in measurements basically contain all rectification effects, the sub-ns-scale detection with the oscilloscope is not sensitive to slow bolometric effects caused by changes of the IV characteristic due to temperature. The noise equivalent power (NEP) is 10 pW/Hz in the frequency range from 0.2 to 0.6 THz and 17 pW/Hz at 1.2 THz and increases to 0.9 μW/Hz at 5.56 THz, which is at the state of the art for room temperature zero-bias Schottky diode-based THz detectors with non-resonant antennas. The voltage and current responsivity of ∼500 kV/W and ∼100 mA/W, respectively, is demonstrated over a frequency range of 0.2 to 1.2 THz with the table-top system. |
| Freie Schlagworte: | free-electron laser (FEL), broadband detectors, THz sources, THz radiation detectors, zero-bias Schottky diode, room temperature detectors |
| Zusätzliche Informationen: | This article belongs to the Special Issue Superconductor and Semiconductor-Based Radiation Detectors |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > THz Bauelemente und THz Systeme |
| Hinterlegungsdatum: | 02 Aug 2024 12:51 |
| Letzte Änderung: | 02 Aug 2024 12:51 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
-
State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz. (deposited 11 Apr 2023 11:44)
- State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz. (deposited 02 Aug 2024 12:51) [Gegenwärtig angezeigt]
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum