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Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides

Gan, Ziyang ; Paradisanos, Ioannis ; Estrada‐Real, Ana ; Picker, Julian ; Najafidehaghani, Emad ; Davies, Francis ; Neumann, Christof ; Robert, Cedric ; Wiecha, Peter ; Watanabe, Kenji ; Taniguchi, Takashi ; Marie, Xavier ; Biskupek, Johannes ; Mundszinger, Manuel ; Leiter, Robert ; Kaiser, Ute ; Krasheninnikov, Arkady V. ; Urbaszek, Bernhard ; George, Antony ; Turchanin, Andrey (2022)
Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides.
In: Advanced Materials, 34 (38)
doi: 10.1002/adma.202205226
Artikel, Bibliographie

Dies ist die neueste Version dieses Eintrags.

Kurzbeschreibung (Abstract)

One‐pot chemical vapor deposition (CVD) growth of large‐area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these 2D semiconductor monolayers takes place upon the thermodynamic‐equilibrium‐driven exchange of the bottom Se atoms of the initially grown MoSe₂ single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X‐ray photoelectron spectroscopy, transmission electron microscopy, and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto‐optical measurements which reveal the strong exciton–phonon coupling and enable an exciton g‐factor of −3.3.

Typ des Eintrags: Artikel
Erschienen: 2022
Autor(en): Gan, Ziyang ; Paradisanos, Ioannis ; Estrada‐Real, Ana ; Picker, Julian ; Najafidehaghani, Emad ; Davies, Francis ; Neumann, Christof ; Robert, Cedric ; Wiecha, Peter ; Watanabe, Kenji ; Taniguchi, Takashi ; Marie, Xavier ; Biskupek, Johannes ; Mundszinger, Manuel ; Leiter, Robert ; Kaiser, Ute ; Krasheninnikov, Arkady V. ; Urbaszek, Bernhard ; George, Antony ; Turchanin, Andrey
Art des Eintrags: Bibliographie
Titel: Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides
Sprache: Englisch
Publikationsjahr: 2022
Ort: Darmstadt
Verlag: Wiley-VCH
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Advanced Materials
Jahrgang/Volume einer Zeitschrift: 34
(Heft-)Nummer: 38
Kollation: 9 Seiten
DOI: 10.1002/adma.202205226
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Kurzbeschreibung (Abstract):

One‐pot chemical vapor deposition (CVD) growth of large‐area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these 2D semiconductor monolayers takes place upon the thermodynamic‐equilibrium‐driven exchange of the bottom Se atoms of the initially grown MoSe₂ single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X‐ray photoelectron spectroscopy, transmission electron microscopy, and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto‐optical measurements which reveal the strong exciton–phonon coupling and enable an exciton g‐factor of −3.3.

Freie Schlagworte: 2D materials, exciton–phonon coupling, high optical quality, Janus transition metal dichalcogenides, monolayers
Sachgruppe der Dewey Dezimalklassifikatin (DDC): 500 Naturwissenschaften und Mathematik > 530 Physik
600 Technik, Medizin, angewandte Wissenschaften > 660 Technische Chemie
Fachbereich(e)/-gebiet(e): 05 Fachbereich Physik
05 Fachbereich Physik > Institut für Physik Kondensierter Materie (IPKM)
Hinterlegungsdatum: 02 Aug 2024 12:47
Letzte Änderung: 02 Aug 2024 12:47
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