Gan, Ziyang ; Paradisanos, Ioannis ; Estrada‐Real, Ana ; Picker, Julian ; Najafidehaghani, Emad ; Davies, Francis ; Neumann, Christof ; Robert, Cedric ; Wiecha, Peter ; Watanabe, Kenji ; Taniguchi, Takashi ; Marie, Xavier ; Biskupek, Johannes ; Mundszinger, Manuel ; Leiter, Robert ; Kaiser, Ute ; Krasheninnikov, Arkady V. ; Urbaszek, Bernhard ; George, Antony ; Turchanin, Andrey (2022)
Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides.
In: Advanced Materials, 2022, 34 (38)
doi: 10.26083/tuprints-00022899
Artikel, Zweitveröffentlichung, Verlagsversion
Kurzbeschreibung (Abstract)
One‐pot chemical vapor deposition (CVD) growth of large‐area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these 2D semiconductor monolayers takes place upon the thermodynamic‐equilibrium‐driven exchange of the bottom Se atoms of the initially grown MoSe₂ single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X‐ray photoelectron spectroscopy, transmission electron microscopy, and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto‐optical measurements which reveal the strong exciton–phonon coupling and enable an exciton g‐factor of −3.3.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2022 |
| Autor(en): | Gan, Ziyang ; Paradisanos, Ioannis ; Estrada‐Real, Ana ; Picker, Julian ; Najafidehaghani, Emad ; Davies, Francis ; Neumann, Christof ; Robert, Cedric ; Wiecha, Peter ; Watanabe, Kenji ; Taniguchi, Takashi ; Marie, Xavier ; Biskupek, Johannes ; Mundszinger, Manuel ; Leiter, Robert ; Kaiser, Ute ; Krasheninnikov, Arkady V. ; Urbaszek, Bernhard ; George, Antony ; Turchanin, Andrey |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides |
| Sprache: | Englisch |
| Publikationsjahr: | 2022 |
| Ort: | Darmstadt |
| Publikationsdatum der Erstveröffentlichung: | 2022 |
| Verlag: | Wiley-VCH |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Advanced Materials |
| Jahrgang/Volume einer Zeitschrift: | 34 |
| (Heft-)Nummer: | 38 |
| Kollation: | 9 Seiten |
| DOI: | 10.26083/tuprints-00022899 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/22899 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichung DeepGreen |
| Kurzbeschreibung (Abstract): | One‐pot chemical vapor deposition (CVD) growth of large‐area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these 2D semiconductor monolayers takes place upon the thermodynamic‐equilibrium‐driven exchange of the bottom Se atoms of the initially grown MoSe₂ single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X‐ray photoelectron spectroscopy, transmission electron microscopy, and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto‐optical measurements which reveal the strong exciton–phonon coupling and enable an exciton g‐factor of −3.3. |
| Freie Schlagworte: | 2D materials, exciton–phonon coupling, high optical quality, Janus transition metal dichalcogenides, monolayers |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-228997 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 600 Technik, Medizin, angewandte Wissenschaften > 660 Technische Chemie |
| Fachbereich(e)/-gebiet(e): | 05 Fachbereich Physik 05 Fachbereich Physik > Institut für Physik Kondensierter Materie (IPKM) |
| Hinterlegungsdatum: | 23 Dez 2022 13:23 |
| Letzte Änderung: | 02 Jan 2023 08:03 |
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