Hajo, Ahid S. ; Preu, Sascha ; Kochkurov, Leonid ; Kusserow, Thomas ; Yilmazoglu, Oktay (2022)
Fully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts.
In: IEEE Access, 9
doi: 10.1109/ACCESS.2021.3122379
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
This paper investigates fully integrated Terahertz (THz) Schottky detectors using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) layers. The combination of InGaAs and metallic NWs shows improved performance at zero-bias than a GaAs based detector with a simulated capacitance of 0.5 fF and a series resistance of 29.7 Ω . Thus, the calculated maximum cut-off frequency of 2.6 THz was obtained for a NW contacted vertical InGaAs THz detector. Initial THz measurements were carried out using a common THz setup for frequencies up to 1.2 THz. A responsivity of 0.81 A/W and a low noise-equivalent power (NEP) value of 7 pW/√Hz at 1 THz were estimated using the measured IV-characteristics of the zero-bias NW-InGaAs based THz Schottky detector.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2022 |
| Autor(en): | Hajo, Ahid S. ; Preu, Sascha ; Kochkurov, Leonid ; Kusserow, Thomas ; Yilmazoglu, Oktay |
| Art des Eintrags: | Bibliographie |
| Titel: | Fully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts |
| Sprache: | Englisch |
| Publikationsjahr: | 2022 |
| Verlag: | IEEE |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | IEEE Access |
| Jahrgang/Volume einer Zeitschrift: | 9 |
| DOI: | 10.1109/ACCESS.2021.3122379 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | This paper investigates fully integrated Terahertz (THz) Schottky detectors using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) layers. The combination of InGaAs and metallic NWs shows improved performance at zero-bias than a GaAs based detector with a simulated capacitance of 0.5 fF and a series resistance of 29.7 Ω . Thus, the calculated maximum cut-off frequency of 2.6 THz was obtained for a NW contacted vertical InGaAs THz detector. Initial THz measurements were carried out using a common THz setup for frequencies up to 1.2 THz. A responsivity of 0.81 A/W and a low noise-equivalent power (NEP) value of 7 pW/√Hz at 1 THz were estimated using the measured IV-characteristics of the zero-bias NW-InGaAs based THz Schottky detector. |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 600 Technik, Medizin, angewandte Wissenschaften > 600 Technik 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > THz Bauelemente und THz Systeme |
| Hinterlegungsdatum: | 02 Aug 2024 12:39 |
| Letzte Änderung: | 24 Sep 2024 14:09 |
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| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
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Fully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts. (deposited 04 Apr 2022 12:30)
- Fully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts. (deposited 02 Aug 2024 12:39) [Gegenwärtig angezeigt]
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