Hajo, Ahid S. ; Yilmazoglu, Oktay ; Dadgar, Armin ; Kuppers, Franko ; Kusserow, Thomas (2020)
Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies.
In: IEEE Access, 8
doi: 10.1109/ACCESS.2020.2991309
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65 A and high current drop of approximately 100 mA for a small ring diode width wd of 1.5µm with 600 nm effective diode height hd at a small threshold voltage of 8.5 V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Hajo, Ahid S. ; Yilmazoglu, Oktay ; Dadgar, Armin ; Kuppers, Franko ; Kusserow, Thomas |
| Art des Eintrags: | Bibliographie |
| Titel: | Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies |
| Sprache: | Englisch |
| Publikationsjahr: | 2020 |
| Verlag: | IEEE Access |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | IEEE Access |
| Jahrgang/Volume einer Zeitschrift: | 8 |
| DOI: | 10.1109/ACCESS.2020.2991309 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65 A and high current drop of approximately 100 mA for a small ring diode width wd of 1.5µm with 600 nm effective diode height hd at a small threshold voltage of 8.5 V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics. |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 600 Technik, Medizin, angewandte Wissenschaften > 600 Technik |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Photonik und Optische Nachrichtentechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > THz Bauelemente und THz Systeme 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Terahertz Systems |
| Hinterlegungsdatum: | 02 Jul 2024 23:13 |
| Letzte Änderung: | 02 Jul 2024 23:13 |
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| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
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Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies. (deposited 09 Feb 2021 10:59)
- Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies. (deposited 02 Jul 2024 23:13) [Gegenwärtig angezeigt]
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