TU Darmstadt / ULB / TUbiblio

Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies

Hajo, Ahid S. ; Yilmazoglu, Oktay ; Dadgar, Armin ; Kuppers, Franko ; Kusserow, Thomas (2020)
Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies.
In: IEEE Access, 8
doi: 10.1109/ACCESS.2020.2991309
Artikel, Bibliographie

Dies ist die neueste Version dieses Eintrags.

Kurzbeschreibung (Abstract)

For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65 A and high current drop of approximately 100 mA for a small ring diode width wd of 1.5µm with 600 nm effective diode height hd at a small threshold voltage of 8.5 V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.

Typ des Eintrags: Artikel
Erschienen: 2020
Autor(en): Hajo, Ahid S. ; Yilmazoglu, Oktay ; Dadgar, Armin ; Kuppers, Franko ; Kusserow, Thomas
Art des Eintrags: Bibliographie
Titel: Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies
Sprache: Englisch
Publikationsjahr: 2020
Verlag: IEEE Access
Titel der Zeitschrift, Zeitung oder Schriftenreihe: IEEE Access
Jahrgang/Volume einer Zeitschrift: 8
DOI: 10.1109/ACCESS.2020.2991309
Zugehörige Links:
Kurzbeschreibung (Abstract):

For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65 A and high current drop of approximately 100 mA for a small ring diode width wd of 1.5µm with 600 nm effective diode height hd at a small threshold voltage of 8.5 V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.

Sachgruppe der Dewey Dezimalklassifikatin (DDC): 600 Technik, Medizin, angewandte Wissenschaften > 600 Technik
Fachbereich(e)/-gebiet(e): 18 Fachbereich Elektrotechnik und Informationstechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Photonik und Optische Nachrichtentechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP)
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > THz Bauelemente und THz Systeme
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Terahertz Systems
Hinterlegungsdatum: 02 Jul 2024 23:13
Letzte Änderung: 02 Jul 2024 23:13
PPN:
Export:
Suche nach Titel in: TUfind oder in Google

Verfügbare Versionen dieses Eintrags

Frage zum Eintrag Frage zum Eintrag

Optionen (nur für Redakteure)
Redaktionelle Details anzeigen Redaktionelle Details anzeigen