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Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies

Hajo, Ahid S. ; Yilmazoglu, Oktay ; Dadgar, Armin ; Kuppers, Franko ; Kusserow, Thomas (2021):
Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies. (Publisher's Version)
In: IEEE Access, 8, pp. 84116-84122. IEEE Access, e-ISSN 2169-3536,
DOI: 10.26083/tuprints-00017517,
[Article]

Abstract

For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65 A and high current drop of approximately 100 mA for a small ring diode width wd of 1.5µm with 600 nm effective diode height hd at a small threshold voltage of 8.5 V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.

Item Type: Article
Erschienen: 2021
Creators: Hajo, Ahid S. ; Yilmazoglu, Oktay ; Dadgar, Armin ; Kuppers, Franko ; Kusserow, Thomas
Origin: Secondary publication via sponsored Golden Open Access
Status: Publisher's Version
Title: Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies
Language: English
Abstract:

For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65 A and high current drop of approximately 100 mA for a small ring diode width wd of 1.5µm with 600 nm effective diode height hd at a small threshold voltage of 8.5 V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.

Journal or Publication Title: IEEE Access
Journal volume: 8
Publisher: IEEE Access
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology
Date Deposited: 09 Feb 2021 10:59
DOI: 10.26083/tuprints-00017517
Official URL: https://tuprints.ulb.tu-darmstadt.de/17517
URN: urn:nbn:de:tuda-tuprints-175171
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