Gronenberg, Ole ; Haberfehlner, Georg ; Zahari, Finn ; Marquardt, Richard ; Kübel, Christian ; Kothleitner, Gerald ; Kienle, Lorenz
Hrsg.: Ziegler, Martin ; Mussenbrock, Thomas ; Kohlstedt, Hermann (2024)
Critical discussion of ex situ and in situ TEM measurements on memristive devices.
In: Bio-inspired information pathways : from neuroscience to neutronics
doi: 10.1007/978-3-031-36705-2_5
Buchkapitel, Bibliographie
Kurzbeschreibung (Abstract)
Memristors are promising candidates for new memory technologies and are capable to mimic synapses in artificial neural networks. The switching in mem-ristive devices occurs typically in few nanometer thin dielectric layers. The direct observation of the switching mechanism is crucial for better comprehension and improvements of memristors. Therefore, in situ experiments are conducted in a transmission electron microscope (TEM). However, sample preparation processes and electron beam irradiation can lead to a chemical and structural modification of the active layers. Moreover, devices may show significant device-to-device variabil- ity due to the details of processing parameters. Thus, it is essential to characterize the identical device electrically before microstructural analysis
| Typ des Eintrags: | Buchkapitel |
|---|---|
| Erschienen: | 2024 |
| Herausgeber: | Ziegler, Martin ; Mussenbrock, Thomas ; Kohlstedt, Hermann |
| Autor(en): | Gronenberg, Ole ; Haberfehlner, Georg ; Zahari, Finn ; Marquardt, Richard ; Kübel, Christian ; Kothleitner, Gerald ; Kienle, Lorenz |
| Art des Eintrags: | Bibliographie |
| Titel: | Critical discussion of ex situ and in situ TEM measurements on memristive devices |
| Sprache: | Englisch |
| Publikationsjahr: | 2024 |
| Verlag: | Springer |
| Buchtitel: | Bio-inspired information pathways : from neuroscience to neutronics |
| Reihe: | Springer series on bio- and neurosystems |
| Band einer Reihe: | 16 |
| DOI: | 10.1007/978-3-031-36705-2_5 |
| URL / URN: | https://link.springer.com/chapter/10.1007/978-3-031-36705-2_... |
| Kurzbeschreibung (Abstract): | Memristors are promising candidates for new memory technologies and are capable to mimic synapses in artificial neural networks. The switching in mem-ristive devices occurs typically in few nanometer thin dielectric layers. The direct observation of the switching mechanism is crucial for better comprehension and improvements of memristors. Therefore, in situ experiments are conducted in a transmission electron microscope (TEM). However, sample preparation processes and electron beam irradiation can lead to a chemical and structural modification of the active layers. Moreover, devices may show significant device-to-device variabil- ity due to the details of processing parameters. Thus, it is essential to characterize the identical device electrically before microstructural analysis |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > In-Situ Elektronenmikroskopie |
| Hinterlegungsdatum: | 12 Jun 2024 09:43 |
| Letzte Änderung: | 17 Jun 2024 09:12 |
| PPN: | 519185625 |
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