Ricohermoso, Emmanuel III ; Heripre, Eva ; Solano‐Arana, Susana ; Riedel, Ralf ; Ionescu, Emanuel (2023)
Hierarchical microstructure growth in a precursor‐derived SiOC thin film prepared on silicon substrate.
In: International Journal of Applied Ceramic Technology, 2023, 20 (2)
doi: 10.26083/tuprints-00023705
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
Silicon oxycarbide film deposited on a silicon substrate has shown superior electrical conductivity relative to its monolithic counterpart. In this work, the evolution of different microstructures detected on the SiOC film reveals its hierarchical microstructure. The existence of sp²‐hybridized carbon domains has been unambiguously confirmed by means of Raman spectroscopy and transmission electron microscopy corroborated with electron energy loss spectroscopy. The diffusion coefficient of carbon in silica and its dependence on temperature were studied by assessing energy‐dispersive X‐ray spectroscopy profiles taken from the cross‐sections of samples annealed at temperatures in the range from 1100°C to 1400°C. The activation energy for diffusion of carbon in silica was determined to be approximately 3.05 eV, which is significantly lower than the values related to the self‐diffusion of silicon and oxygen. The microstructural evolution of precursor to SiCnO₄-n and SiC serves as migration path of sp²‐hybridized carbon to the SiOₓ layer. With increasing temperature, the formation of microscale carbon‐rich segregation is promoted while the SiOC film becomes thinner.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2023 |
| Autor(en): | Ricohermoso, Emmanuel III ; Heripre, Eva ; Solano‐Arana, Susana ; Riedel, Ralf ; Ionescu, Emanuel |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Hierarchical microstructure growth in a precursor‐derived SiOC thin film prepared on silicon substrate |
| Sprache: | Englisch |
| Publikationsjahr: | 28 November 2023 |
| Ort: | Darmstadt |
| Publikationsdatum der Erstveröffentlichung: | 2023 |
| Ort der Erstveröffentlichung: | Oxford |
| Verlag: | Wiley-Blackwell |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | International Journal of Applied Ceramic Technology |
| Jahrgang/Volume einer Zeitschrift: | 20 |
| (Heft-)Nummer: | 2 |
| DOI: | 10.26083/tuprints-00023705 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/23705 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichung DeepGreen |
| Kurzbeschreibung (Abstract): | Silicon oxycarbide film deposited on a silicon substrate has shown superior electrical conductivity relative to its monolithic counterpart. In this work, the evolution of different microstructures detected on the SiOC film reveals its hierarchical microstructure. The existence of sp²‐hybridized carbon domains has been unambiguously confirmed by means of Raman spectroscopy and transmission electron microscopy corroborated with electron energy loss spectroscopy. The diffusion coefficient of carbon in silica and its dependence on temperature were studied by assessing energy‐dispersive X‐ray spectroscopy profiles taken from the cross‐sections of samples annealed at temperatures in the range from 1100°C to 1400°C. The activation energy for diffusion of carbon in silica was determined to be approximately 3.05 eV, which is significantly lower than the values related to the self‐diffusion of silicon and oxygen. The microstructural evolution of precursor to SiCnO₄-n and SiC serves as migration path of sp²‐hybridized carbon to the SiOₓ layer. With increasing temperature, the formation of microscale carbon‐rich segregation is promoted while the SiOC film becomes thinner. |
| Freie Schlagworte: | carbon segregation, growth kinetics, polymer‐derived ceramics, thin films |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-237056 |
| Zusätzliche Informationen: | Special Issue: Emergent Materials and Sustainable Manufacturing Technologies in a Global Landscape |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 540 Chemie 600 Technik, Medizin, angewandte Wissenschaften > 621.3 Elektrotechnik, Elektronik |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Integrierte Mikro-Nano-Systeme |
| Hinterlegungsdatum: | 28 Nov 2023 13:55 |
| Letzte Änderung: | 29 Nov 2023 10:19 |
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| Suche nach Titel in: | TUfind oder in Google |
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- Hierarchical microstructure growth in a precursor‐derived SiOC thin film prepared on silicon substrate. (deposited 28 Nov 2023 13:55) [Gegenwärtig angezeigt]
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