Ricohermoso, Emmanuel III ; Heripre, Eva ; Solano‐Arana, Susana ; Riedel, Ralf ; Ionescu, Emanuel (2023)
Hierarchical microstructure growth in a precursor‐derived SiOC thin film prepared on silicon substrate.
In: International Journal of Applied Ceramic Technology, 20 (2)
doi: 10.1111/ijac.14185
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
Silicon oxycarbide film deposited on a silicon substrate has shown superior electrical conductivity relative to its monolithic counterpart. In this work, the evolution of different microstructures detected on the SiOC film reveals its hierarchical microstructure. The existence of sp(2)-hybridized carbon domains has been unambiguously confirmed by means of Raman spectroscopy and transmission electron microscopy corroborated with electron energy loss spectroscopy. The diffusion coefficient of carbon in silica and its dependence on temperature were studied by assessing energy-dispersive X-ray spectroscopy profiles taken from the cross-sections of samples annealed at temperatures in the range from 1100 degrees C to 1400 degrees C. The activation energy for diffusion of carbon in silica was determined to be approximately 3.05 eV, which is significantly lower than the values related to the self-diffusion of silicon and oxygen. The microstructural evolution of precursor to SiCnO4-n and SiC serves as migration path of sp(2)-hybridized carbon to the SiOx layer. With increasing temperature, the formation of microscale carbon-rich segregation is promoted while the SiOC film becomes thinner.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2023 |
| Autor(en): | Ricohermoso, Emmanuel III ; Heripre, Eva ; Solano‐Arana, Susana ; Riedel, Ralf ; Ionescu, Emanuel |
| Art des Eintrags: | Bibliographie |
| Titel: | Hierarchical microstructure growth in a precursor‐derived SiOC thin film prepared on silicon substrate |
| Sprache: | Englisch |
| Publikationsjahr: | März 2023 |
| Verlag: | Wiley |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | International Journal of Applied Ceramic Technology |
| Jahrgang/Volume einer Zeitschrift: | 20 |
| (Heft-)Nummer: | 2 |
| DOI: | 10.1111/ijac.14185 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Silicon oxycarbide film deposited on a silicon substrate has shown superior electrical conductivity relative to its monolithic counterpart. In this work, the evolution of different microstructures detected on the SiOC film reveals its hierarchical microstructure. The existence of sp(2)-hybridized carbon domains has been unambiguously confirmed by means of Raman spectroscopy and transmission electron microscopy corroborated with electron energy loss spectroscopy. The diffusion coefficient of carbon in silica and its dependence on temperature were studied by assessing energy-dispersive X-ray spectroscopy profiles taken from the cross-sections of samples annealed at temperatures in the range from 1100 degrees C to 1400 degrees C. The activation energy for diffusion of carbon in silica was determined to be approximately 3.05 eV, which is significantly lower than the values related to the self-diffusion of silicon and oxygen. The microstructural evolution of precursor to SiCnO4-n and SiC serves as migration path of sp(2)-hybridized carbon to the SiOx layer. With increasing temperature, the formation of microscale carbon-rich segregation is promoted while the SiOC film becomes thinner. |
| Freie Schlagworte: | carbon segregation, growth kinetics, polymer-derived ceramics, thin films, solid-state NMR, raman-spectroscopy, structural-characterization, ceramic nanocomposites, oxycarbide glasses, pyrolysis, diffusion, carbon, gel, identification |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Integrierte Mikro-Nano-Systeme |
| Hinterlegungsdatum: | 09 Mär 2023 06:14 |
| Letzte Änderung: | 29 Nov 2023 10:20 |
| PPN: | 505635402 |
| Zugehörige Links: | |
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| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
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Hierarchical microstructure growth in a precursor‐derived SiOC thin film prepared on silicon substrate. (deposited 28 Nov 2023 13:55)
- Hierarchical microstructure growth in a precursor‐derived SiOC thin film prepared on silicon substrate. (deposited 09 Mär 2023 06:14) [Gegenwärtig angezeigt]
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