Körber, C. ; Krishnakumar, V. ; Klein, Andreas ; Panaccione, G. ; Torelli, P. ; Walsh, A. ; Silva, J. L. F. Da ; Wei, S.-H. ; Egdell, R. G. ; Payne, D. J. (2022)
Electronic structure of In₂O₃ and Sn-doped In₂O₃ by hard x-ray photoemission spectroscopy.
In: Physical Review B, 2010, 81 (16)
doi: 10.26083/tuprints-00021168
Artikel, Zweitveröffentlichung, Verlagsversion
 | Es ist eine neuere Version dieses Eintrags verfügbar. |
Kurzbeschreibung (Abstract)
The valence and core levels of In₂O₃ and Sn-doped In₂O₃ have been studied by hard x-ray photoemission spectroscopy (hν=6000 eV) and by conventional Al Kα (hν=1486.6 eV) x-ray photoemission spectroscopy. The experimental spectra are compared with density-functional theory calculations. It is shown that structure deriving from electronic levels with significant In or Sn 5s character is selectively enhanced under 6000 eV excitation. This allows us to infer that conduction band states in Sn-doped samples and states at the bottom of the valence band both contain a pronounced In 5s contribution. The In 3d core line measured at hν=1486.6 eV for both undoped and Sn-doped In₂O₃ display an asymmetric lineshape, and may be fitted with two components associated with screened and unscreened final states. The In 3d core line spectra excited at hν=6000 eV for the Sn-doped samples display pronounced shoulders and demand a fit with two components. The In 3d core line spectrum for the undoped sample can also be fitted with two components, although the relative intensity of the component associated with the screened final state is low, compared to excitation at 1486.6 eV. These results are consistent with a high concentration of carriers confined close to the surface of nominally undoped In₂O₃. This conclusion is in accord with the fact that a conduction band feature observed for undoped In₂O₃ in Al Kα x-ray photoemission is much weaker than expected in hard x-ray photoemission.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2022 |
| Autor(en): | Körber, C. ; Krishnakumar, V. ; Klein, Andreas ; Panaccione, G. ; Torelli, P. ; Walsh, A. ; Silva, J. L. F. Da ; Wei, S.-H. ; Egdell, R. G. ; Payne, D. J. |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Electronic structure of In₂O₃ and Sn-doped In₂O₃ by hard x-ray photoemission spectroscopy |
| Sprache: | Englisch |
| Publikationsjahr: | 2022 |
| Publikationsdatum der Erstveröffentlichung: | 2010 |
| Verlag: | American Physical Society |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review B |
| Jahrgang/Volume einer Zeitschrift: | 81 |
| (Heft-)Nummer: | 16 |
| Kollation: | 9 Seiten |
| DOI: | 10.26083/tuprints-00021168 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/21168 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichungsservice |
| Kurzbeschreibung (Abstract): | The valence and core levels of In₂O₃ and Sn-doped In₂O₃ have been studied by hard x-ray photoemission spectroscopy (hν=6000 eV) and by conventional Al Kα (hν=1486.6 eV) x-ray photoemission spectroscopy. The experimental spectra are compared with density-functional theory calculations. It is shown that structure deriving from electronic levels with significant In or Sn 5s character is selectively enhanced under 6000 eV excitation. This allows us to infer that conduction band states in Sn-doped samples and states at the bottom of the valence band both contain a pronounced In 5s contribution. The In 3d core line measured at hν=1486.6 eV for both undoped and Sn-doped In₂O₃ display an asymmetric lineshape, and may be fitted with two components associated with screened and unscreened final states. The In 3d core line spectra excited at hν=6000 eV for the Sn-doped samples display pronounced shoulders and demand a fit with two components. The In 3d core line spectrum for the undoped sample can also be fitted with two components, although the relative intensity of the component associated with the screened final state is low, compared to excitation at 1486.6 eV. These results are consistent with a high concentration of carriers confined close to the surface of nominally undoped In₂O₃. This conclusion is in accord with the fact that a conduction band feature observed for undoped In₂O₃ in Al Kα x-ray photoemission is much weaker than expected in hard x-ray photoemission. |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-211688 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung DFG-Sonderforschungsbereiche (inkl. Transregio) DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden |
| Hinterlegungsdatum: | 20 Apr 2022 12:10 |
| Letzte Änderung: | 21 Apr 2022 05:16 |
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- Electronic structure of In₂O₃ and Sn-doped In₂O₃ by hard x-ray photoemission spectroscopy. (deposited 20 Apr 2022 12:10) [Gegenwärtig angezeigt]
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